Browsing by author "Clima, Sergiu"
Now showing items 41-60 of 141
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Enhancement of CBRAM performance by controlled formation of a hourglass shaped filament
Belmonte, Attilio; Goux, Ludovic; Woo, Jiyong; Celano, Umberto; Redolfi, Augusto; Clima, Sergiu; Kar, Gouri Sankar (2017) -
Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors
Degraeve, Robin; Chai, Zheng; Zhang, W; Clima, Sergiu; Hatem, F; Zhang, JF; Freitas, P; Marsland, J; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations
Sankaran, Kiroubanand; Clima, Sergiu; Mees, Maarten; Pourtois, Geoffrey (2014) -
Exploring alternative metals to Cu and W for interconnects: an ab initio insight
Sankaran, Kiroubanand; Clima, Sergiu; Mees, Maarten; Adelmann, Christoph; Tokei, Zsolt; Pourtois, Geoffrey (2014) -
Extensive reliability investigation of a-VMCO nonfilamentary RRAM: relaxation, retention and key differences to filamentary switching
Subhechha, Subhali; Govoreanu, Bogdan; Chen, Yangyin; Clima, Sergiu; De Meyer, Kristin; Van Houdt, Jan; Jurczak, Gosia (2016) -
Ferroelectric Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants
Clima, Sergiu; O'Sullivan, Barry; Ronchi, Nicolo; Garcia Bardon, Marie; Banerjee, Kaustuv; Van den Bosch, Geert; Pourtois, Geoffrey; Van Houdt, Jan (2020) -
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
Goux, Ludovic; Sankaran, Kiroubanand; Kar, Gouri Sankar; Jossart, Nico; Opsomer, Karl; Degraeve, Robin; Pourtois, Geoffrey; Rignanese, G.-M.; Detavernier, C.; Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Govoreanu, Bogdan; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2012) -
First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2
Alam, Md Nur Kutubul; Clima, Sergiu; O'Sullivan, Barry; Kaczer, Ben; Pourtois, Geoffrey; Heyns, Marc; Van Houdt, Jan (2021) -
First principles simulations - Guiding tool for industrial research
Clima, Sergiu; Mees, Maarten; Sankaran, Kiroubanand; Pourtois, Geoffrey (2012) -
First principles simulations of oxygen diffusion in RRAM materials
Clima, Sergiu; Sankaran, Kiroubanand; Mees, Maarten; Chen, Yangyin; Goux, Ludovic; Govoreanu, Bogdan; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia; Pourtois, Geoffrey (2012) -
First-principles modeling of OTS chalcogenides for SELECTORS
Clima, Sergiu; Garbin, Daniele; Devulder, Wouter; Keukelier, Jonas; Opsomer, Karl; Goux, Ludovic; Kar, Gouri Sankar; Pourtois, Geoffrey (2019) -
First-principles perspective on poling mechanisms and ferroelectric/ antiferroelectric behavior of Hf1-xZrxO2 for FEFET applications
Clima, Sergiu; McMitchell, Sean; Florent, Karine; Nyns, Laura; Popovici, Mihaela Ioana; Ronchi, Nicolo; Di Piazza, Luca; Van Houdt, Jan; Pourtois, Geoffrey (2018) -
First-principles simulation of oxygen diffusion in HfOx: role in the resistive switching mechanism
Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Mees, Maarten; Sankaran, Kiroubanand; Govoreanu, Bogdan; Jurczak, Gosia; De Gendt, Stefan; Pourtois, Geoffrey (2012-03) -
First-principles thermodynamic and kinetic aspects of the switching in Cu-based and HfOx-based RRAM stacks
Clima, Sergiu; Sankaran, Kiroubanand; Degraeve, Robin; Chen, Yangyin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2014) -
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
Clima, Sergiu; Chen, Yangyin; Chen, Michael; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Fantini, Andrea; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Growth and material characterization of hafnium titanates deposited by atomic layer deposition
Popovici, Mihaela Ioana; Delabie, Annelies; Van Elshocht, Sven; Clima, Sergiu; Pourtois, Geoffrey; Swerts, Johan; Nyns, Laura; Tomida, Kazuyuki; Menou, Nicolas; Wouters, Dirk; Opsomer, Karl; Detavernier, Christophe; Kittl, Jorge (2009) -
Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
Avasarala, Naga Sruti; Donadio, Gabriele Luca; Witters, Thomas; Opsomer, Karl; Govoreanu, Bogdan; Fantini, Andrea; Clima, Sergiu; Oh, Hyungrock; Kundu, Shreya; Devulder, Wouter; van der Veen, Marleen; Van Houdt, Jan; Heyns, Marc; Goux, Ludovic; Kar, Gouri Sankar (2018) -
Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM
Chen, Yangyin; Pourtois, Geoffrey; Clima, Sergiu; Goux, Ludovic; Govoreanu, Bogdan; Fantini, Andrea; Degraeve, Robin; Kar, Gouri Sankar; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM device
Chen, Yangyin; Pourtois, Geoffrey; Clima, Sergiu; Govoreanu, Bogdan; Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2012) -
HfOx as RRAM material – first principles insight on why and how it works
Clima, Sergiu; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2013)