Now showing items 21-23 of 23

    • Scaled transistors with 2D materials from the 300mm fab 

      Asselberghs, Inge; Schram, Tom; Smets, Quentin; Groven, Benjamin; Brems, Steven; Phommahaxay, Alain; Cott, Daire; Dupuy, Emmanuel; Radisic, Dunja; de Marneffe, Jean-Francois; Thiam, Arame; Li, Waikin; Devriendt, Katia; Gaur, Abhinav; Verreck, Devin; Maurice, Thibaut; Lin, Dennis; Morin, Pierre; Radu, Iuliana (2020)
    • Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB 

      Smets, Quentin; Schram, Tom; Verreck, Devin; Cott, Daire; Groven, Benjamin; Ahmed, Zubair; Kaczer, Ben; Mitard, Jerome; Wu, Xiangyu; Kundu, Souvik; Mertens, Hans; Radisic, Dunja; Thiam, Arame; Li, Waikin; Dupuy, Emmanuel; Tao, Zheng; Vandersmissen, Kevin; Maurice, Thibaut; Lin, Dennis; Morin, Pierre; Asselberghs, Inge; Radu, Iuliana (2021)
    • Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab 

      Asselberghs, Inge; Smets, Quentin; Schram, Tom; Groven, Benjamin; Verreck, Devin; Afzalian, Aryan; Arutchelvan, Goutham; Gaur, Abhinav; Cott, Daire; Maurice, Thibaut; Brems, Steven; Kennes, Koen; Phommahaxay, Alain; Dupuy, Emmanuel; Radisic, Dunja; de Marneffe, Jean-Francois; Thiam, Arame; Li, Waikin; Devriendt, Katia; Huyghebaert, Cedric; Lin, Dennis; Caymax, Matty; Morin, Pierre; Radu, Iuliana (2020)