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Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB
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Authors
Smets, Quentin
;
Schram, Tom
;
Verreck, Devin
;
Cott, Daire
;
Groven, Benjamin
;
Ahmed, Zubair
;
Kaczer, Ben
;
Mitard, Jerome
;
Wu, Xiangyu
;
Kundu, Souvik
;
Mertens, Hans
;
Radisic, Dunja
;
Thiam, Arame
;
Li, Waikin
;
Dupuy, Emmanuel
;
Tao, Zheng
;
Vandersmissen, Kevin
;
Maurice, Thibaut
;
Lin, Dennis
;
Morin, Pierre
;
Asselberghs, Inge
;
Radu, Iuliana
DOI
10.1109/IEDM19574.2021.9720517
EISBN
978-1-6654-2572-8
ISSN
2380-9248
Conference
IEEE International Electron Devices Meeting (IEDM)
Journal
na
Title
Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB
Publication type
Proceedings paper
Embargo date
9999-12-31
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2
20.500.12860/41825.2
*
2023-08-08T07:52:39Z
validation by library/open access desk
1
20.500.12860/41825
2023-06-20T10:33:46Z
*Selected version
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