Browsing by author "Lin, Dennis"
Now showing items 1-20 of 197
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2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
300mm wafer level WS2 p-MOS capacitor characterization, smulation, and analysis
Koladi Mootheri, Vivek; Okuyama, Atsushi; Smets, Quentin; Schram, Tom; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Lin, Dennis (2020) -
3D technologies for analog/RF applications
Vandooren, Anne; Parvais, Bertrand; Witters, Liesbeth; Walke, Amey; Vais, Abhitosh; Merckling, Clement; Lin, Dennis; Waldron, Niamh; Wambacq, Piet; Mocuta, Dan; Collaert, Nadine (2017) -
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2019) -
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Carolan, Patrick; Bender, Hugo; Kar, Gouri Sankar (2020) -
A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Simoen, Eddy; Brammertz, Guy; Penaud, Julien; Merckling, Clement; Lin, Dennis; Wang, Wei-E; Meuris, Marc (2009) -
A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Simoen, Eddy; Brammertz, Guy; Penaud, Julien; Merckling, Clement; Lin, Dennis; Wang, Wei-E; Meuris, Marc (2009) -
A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
Gaur, Abhinav; Agarwal, Tarun; Asselberghs, Inge; Radu, Iuliana; Heyns, Marc; Lin, Dennis (2020) -
A near- & short-wave IR tunable InGaAs nanomembrane photoFET on flexible substrate for lightweight and wide-angle imaging applications
Li, Yida; Alian, AliReza; Huang, Li; Ang, Kah Wee; Lin, Dennis; Mocuta, Dan; Collaert, Nadine; Thean, Aaron V-Y (2018) -
A new direction for III-V FETs for mobile CPU operation uncluding burst-mode: In0.35Ga0.65As channel
Rakshit, T.; Obradovic, B.; Wang, W.-E.; Kim, Weon Hong; Shin, Keo Myoung; Baek, Seongcheol; Lee, Sung Woo; Kim, S.-H.; Lee, J.-M.; Kim, Daeyong; Hoover, A.; Song, W.-B.; Cantoro, M.; Heo, Y.-C.; Rooyackers, Rita; Ardila, S.C.; Vais, Abhitosh; Lin, Dennis; Collaert, Nadine; Rodder, M.S. (2017) -
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
A unified two-band model for oxide traps and interface states in MOS capacitors
Taur, Yuan; Chen, Han-Ping; Xie, Qian; Ahn, Jaesoo; McIntyre, Paul; Lin, Dennis; Vais, Abhitosh; Veskler, Dimitri (2015) -
AC transconductance dispersion (ACGD): a method to profile oxide traps in MOSFETs without body contact
Sun, Xiao; Cui, Sharon; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Lin, Dennis; Ma, T.P. (2012) -
Advanced channel materials for the semiconductor industry
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Lin, Dennis; Mitard, Jerome; Sioncke, Sonja; Waldron, Niamh; Witters, Liesbeth; Zhou, Daisy; Thean, Aaron (2015) -
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
Heyns, Marc; Brammertz, Guy; Caymax, Matty; Groeseneken, Guido; Hoffmann, Thomas Y.; Lin, Dennis; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Pourtois, Geoffrey; Verhulst, Anne; Wang, Gang (2010) -
Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition
Ameen, Mahmoud; Nyns, Laura; Sioncke, Sonja; Lin, Dennis; Ivanov, Tsvetan; Conard, Thierry; Meersschaut, Johan; Feteha, M. Y.; Van Elshocht, Sven; Delabie, Annelies (2014) -
ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices
Wu, Xiangyu; Lin, Dennis; Cott, Daire; De Marneffe, Jean-Francois; Groven, Benjamin; Sergeant, Stefanie; Shi, Yuanyuan; Smets, Quentin; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana (2021) -
ALD on high mobility channels: engineering the proper gate stack passivation
Sioncke, Sonja; Lin, Dennis; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Caymax, Matty; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Beckhoff, Burkhard (2010) -
Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
Alian, AliReza; Brammertz, Guy; Merckling, Clement; Firrincieli, Andrea; Wang, Wei-E; Lin, Dennis; Caymax, Matty; Meuris, Marc; De Meyer, Kristin; Heyns, Marc (2011) -
Amorphous gadolinium aluminate as a dielectric and sulfur for indium phosphide passivation
van Dorp, Dennis; Nyns, Laura; Cuypers, Daniel; Ivanov, Tsvetan; Brizzi, Simone; Tallarida, Massimo; Fleischmann, Claudia; Hönicke, Philipp; Müller, Matthias; Richard, Olivier; Schmeisser, Dieter; De Gendt, Stefan; Lin, Dennis; Adelmann, Christoph (2019)