Browsing by author "Lin, Dennis"
Now showing items 21-40 of 192
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An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices
Vais, Abhitosh; Martens, Koen; Lin, Dennis; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016) -
An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates
Waldron, Niamh; Merckling, Clement; Guo, Weiming; Ong, Patrick; Teugels, Lieve; Ansar, Sheikh; Tsvetanova, Diana; Sebaai, Farid; van Dorp, Dennis; Milenin, Alexey; Lin, Dennis; Nyns, Laura; Mitard, Jerome; Pourghaderi, Mohammad Ali; Douhard, Bastien; Richard, Olivier; Bender, Hugo; Boccardi, Guillaume; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014) -
Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2
Gaur, Abhinav; Chiappe, Daniele; Lin, Dennis; Cott, Daire; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana (2019) -
Analysis of border traps in high-k gate dielectrics on high-mobility channels
Simoen, Eddy; Lin, Dennis; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Mitard, Jerome; Claeys, Cor (2013) -
Analysis of III-V oxides at high-k / InGaAs interfaces induced by metal electrodes
Yoshida, Shinichi; Lin, Dennis; Suzuki, Rena; Miyanami, Yuki; Collaert, Nadine; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji (2019) -
Approaching Fermi level unpinning in oxide-In0.2Ga0.8As
Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, Dennis; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M. (2008) -
Atomic layer deposition of Al2O3 on S-passivated Ge
Sioncke, Sonja; Ceuppens, Joris; Lin, Dennis; Nyns, Laura; Delabie, Annelies; Struyf, Herbert; De Gendt, Stefan; Muller, Matthias; Beckhoff, Burkhard; Caymax, Matty (2011) -
Atomic layer deposition of Gd2O3 and Sc2O3 on In0.53Ga0.47As: Interfacial layer engineering
Ameen, Mahmoud; Nyns, Laura; Lin, Dennis; Ivanov, Tsvetan; Conard, Thierry; Meersschaut, Johan; Sioncke, Sonja; Feteha, Mohamed; Van Elshocht, Sven; Delabie, Annelies (2014) -
Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications
Delabie, Annelies; Nyns, Laura; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Lin, Dennis; Meuris, Marc; Ragnarsson, Lars-Ake; Sioncke, Sonja; Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2007) -
Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium
Sioncke, Sonja; Lin, Dennis; Nyns, Laura; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Franquet, Alexis; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Muller, Matthias; Kobe, Michael; Beckhoff, Burkhard; Caymax, Matty (2011) -
Atomic layer deposition of novel interface layers on III-V channel devices
Tang, Fu; Jiang, Xiaoqiang; Xie, Qi; Givens, Michael; Maes, Jan; Sioncke, Sonja; Tsvetan, Ivanov; Nyns, Laura; Lin, Dennis; Collaert, Nadine (2017) -
Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices
Adelmann, Christoph; Lin, Dennis; Nyns, Laura; Schepers, Bart; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty (2011) -
Band-to-band tunneling MOSCAPs for rapid TFET characterization
Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014) -
BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line
Schram, Tom; Smets, Quentin; Heyne, Markus; Groven, Benjamin; Kunnen, Eddy; Thiam, Arame; Devriendt, Katia; Delabie, Annelies; Lin, Dennis; Chiappe, Daniele; Asselberghs, Inge; Lux, Marcel; Brus, Stephan; Huyghebaert, Cedric; Sayan, Safak; Juncker, Aurélie; Caymax, Matty; Radu, Iuliana (2017) -
Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Lin, Dennis; Alian, AliReza; Gupta, S.; Yang, B.; Bury, Erik; Sioncke, Sonja; Degraeve, Robin; Toledano Luque, Maria; Krom, Raymond; Favia, Paola; Bender, Hugo; Caymax, Matty; Saraswat, K.C.; Collaert, Nadine; Thean, Aaron (2012) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Moussa, Alain; Merckling, Clement; Witters, Liesbeth; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Border traps in Ge/III-V channel devices: Analysis and reliability aspects
Simoen, Eddy; Lin, Dennis; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Mitard, Jerome; Claeys, Cor (2013) -
Border traps in InGaAs nMOSFETs assessed by low-frequency noise
Scarpino, Mercedes; Gupta, Somya; Lin, Dennis; Alian, AliReza; Crupi, Felice; Collaert, Nadine; Thean, Aaron; Simoen, Eddy (2014)