Publication:
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
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1928 since deposited on 2021-10-19
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Acq. date: 2025-12-08
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Views
1928 since deposited on 2021-10-19
1last month
1last week
Acq. date: 2025-12-08
Citations