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Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Publication:
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Date
2011
Proceedings Paper
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23080.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vincent, Benjamin
;
Gencarelli, Federica
;
Lin, Dennis
;
Nyns, Laura
;
Richard, Olivier
;
Bender, Hugo
;
Douhard, Bastien
;
Moussa, Alain
;
Merckling, Clement
;
Witters, Liesbeth
;
Vandervorst, Wilfried
;
Loo, Roger
;
Caymax, Matty
;
Heyns, Marc
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Metrics
Views
1925
since deposited on 2021-10-19
423
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations