Publication:

Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments

Date

2011
Proceedings Paper
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dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorLin, Dennis
dc.contributor.authorNyns, Laura
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMoussa, Alain
dc.contributor.authorMerckling, Clement
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T21:20:26Z
dc.date.available2021-10-19T21:20:26Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20094
dc.source.beginpage239
dc.source.conferenceULSI Process Integration 7
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
dc.source.endpage248
dc.title

Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments

dc.typeProceedings paper
dspace.entity.typePublication
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