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An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates
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An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates
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Date
2014
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Waldron, Niamh
;
Merckling, Clement
;
Guo, Weiming
;
Ong, Patrick
;
Teugels, Lieve
;
Ansar, Sheikh
;
Tsvetanova, Diana
;
Sebaai, Farid
;
van Dorp, Dennis
;
Milenin, Alexey
;
Lin, Dennis
;
Nyns, Laura
;
Mitard, Jerome
;
Pourghaderi, Mohammad Ali
;
Douhard, Bastien
;
Richard, Olivier
;
Bender, Hugo
;
Boccardi, Guillaume
;
Caymax, Matty
;
Heyns, Marc
;
Vandervorst, Wilfried
;
Barla, Kathy
;
Collaert, Nadine
;
Thean, Aaron
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Downloads
1
since deposited on 2021-10-22
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Views
1934
since deposited on 2021-10-22
2
last month
1
last week
Acq. date: 2026-02-28
Citations