Publication:

An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Date

2014
Proceedings Paper
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dc.contributor.authorWaldron, Niamh
dc.contributor.authorMerckling, Clement
dc.contributor.authorGuo, Weiming
dc.contributor.authorOng, Patrick
dc.contributor.authorTeugels, Lieve
dc.contributor.authorAnsar, Sheikh
dc.contributor.authorTsvetanova, Diana
dc.contributor.authorSebaai, Farid
dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorMilenin, Alexey
dc.contributor.authorLin, Dennis
dc.contributor.authorNyns, Laura
dc.contributor.authorMitard, Jerome
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorDouhard, Bastien
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorTsvetanova, Diana
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T08:07:48Z
dc.date.available2021-10-22T08:07:48Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24800
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6894349&contentType=Conference+Publications
dc.source.beginpage1
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate11/06/2014
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage2
dc.title

An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates

dc.typeProceedings paper
dspace.entity.typePublication
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