Publication:

Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments

Date

Loading...
Thumbnail Image

Abstract

Description

Statistics

Views

1968 since deposited on 2021-10-19
3last month
1last week
Acq. date: 2026-08-08

Citations

Statistics

Views

1968 since deposited on 2021-10-19
3last month
1last week
Acq. date: 2026-08-08

Citations