Browsing by author "Smets, Quentin"
Now showing items 1-20 of 69
-
2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility
Kljucar, Luka; Smets, Quentin; van Setten, Michiel; Mitard, Jerome; Belmonte, Attilio; Dekkers, Harold; Teugels, Lieve; Mao, Ming; Puliyalil, Harinarayanan; del Agua Borniquel, Jose Ignacio; Delhougne, Romain; Sankaran, Kiroubanand; Tokei, Zsolt (2020) -
300mm wafer level WS2 p-MOS capacitor characterization, smulation, and analysis
Koladi Mootheri, Vivek; Okuyama, Atsushi; Smets, Quentin; Schram, Tom; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Lin, Dennis (2020) -
ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices
Wu, Xiangyu; Lin, Dennis; Cott, Daire; De Marneffe, Jean-Francois; Groven, Benjamin; Sergeant, Stefanie; Shi, Yuanyuan; Smets, Quentin; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana (2021) -
Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K
Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Agopian, Paula Ghedini; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Smets, Quentin; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2016) -
Assessing the prospects of atomic layer deposition for two-dimensional materials in microelectronic applications
Groven, Benjamin; Tomczak, Yoann; Nalin Mehta, Ankit; Bender, Hugo; Zhang, Haodong; Schram, Tom; Smets, Quentin; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies (2018) -
Band-tails tunneling resolving the theory-experiment discrepancy in Esaki diodes
Bizindavyi, Jasper; Verhulst, Anne; Smets, Quentin; Verreck, Devin; Soree, Bart; Groeseneken, Guido (2018) -
Band-to-band tunneling MOSCAPs for rapid TFET characterization
Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014) -
BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line
Schram, Tom; Smets, Quentin; Heyne, Markus; Groven, Benjamin; Kunnen, Eddy; Thiam, Arame; Devriendt, Katia; Delabie, Annelies; Lin, Dennis; Chiappe, Daniele; Asselberghs, Inge; Lux, Marcel; Brus, Stephan; Huyghebaert, Cedric; Sayan, Safak; Juncker, Aurélie; Caymax, Matty; Radu, Iuliana (2017) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Calibration of bulk trap-assisted tunneling and Shockley-Read-Hall currents and impact on InGaAs tunnel-FETs
Smets, Quentin; Verhulst, Anne; Simoen, Eddy; Gundlach, David; Richter, Curt; Collaert, Nadine; Heyns, Marc (2017) -
Calibration of models for III-V TFET performance prediction
Smets, Quentin (2016-07) -
Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction
Smets, Quentin; Verhulst, Anne; El Kazzi, Salim; Gundlach, David; Richter, Curt; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Heyns, Marc (2016) -
Calibration of the high-doping induced ballistic band-tails tunneling current in In0.53Ga0.47As Esaki diodes
Bizindavyi, Jasper; Verhulst, Anne; Smets, Quentin; Verreck, Devin; Collaert, Nadine; Mocuta, Anda; Soree, Bart; Groeseneken, Guido (2017) -
Challenges of large area integration of 2D materials in CMOS line
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Chiappe, Daniele; Asselberghs, Inge; Brems, Steven; Verguts, Ken; Marinov, Daniil; Pantouvaki, Marianna (2018) -
Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications
Lee, Kookjin; Ji, Hyunjin; Kim, Yanghee; Kaczer, Ben; Lee, Hyebin; Ahn, Jae-Pyoung; Choi, Junhee; Grill, Alexander; Panarella, Luca; Smets, Quentin; Verreck, Devin; Van Beek, Simon; Vaisman Chasin, Adrian; Linten, Dimitri; Na, Junhong; Lee, Jae Woo; De Wolf, Ingrid; Kim, Gyu-Tae (2022) -
Dry cleaning of WS2 using reducing downstream plasma
de Marneffe, Jean-Francois; Marinov, Daniil; Zhang, Jianran; With, Patrick; Smets, Quentin; Arutchelvan, Goutham; Voronina, E.; Mankelevitch, Yuri; Rakhimova, Tatyana; Bal, Kristof; Asselberghs, Inge; De Gendt, Stefan (2019) -
Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg
Wu, Xiangyu; Cott, Daire; Lin, Zaoyang; Shi, Yuanyuan; Groven, Benjamin; Morin, Pierre; Verreck, Devin; Smets, Quentin; Medina, Henry; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana; Lin, Dennis (2021) -
Dual gate synthetic WS2 MOSFETs with 120 mu S/mu m Gm 2.7 mu F/cm(2) capacitance and ambipolar channel
Lin, Dennis; Wu, Xiangyu; Cott, Daire; Verreck, Devin; Groven, Benjamin; Sergeant, Stefanie; Smets, Quentin; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana (2020) -
Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices
Bizindavyi, Jasper; Verhulst, Anne; Smets, Quentin; Soree, Bart; Groeseneken, Guido (2019)