Browsing by author "Smets, Quentin"
Now showing items 21-40 of 69
-
Extracting the effective bandgap of heterojunctions using Esaki diode I-V meaurements
Smets, Quentin; Verhulst, Anne; El Kazzi, Salim; Verreck, Devin; Richard, Olivier; Bender, Hugo; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Heyns, Marc (2015) -
Extreme scaling enabled by MX2 transistors: variability challenges (invited)
Smets, Quentin; Arutchelvan, Goutham; Schram, Tom; Verreck, Devin; Groven, Benjamin; Cott, Daire; Ahmed, Zubair; Shi, Yuanyuan; Sutar, Surajit; Nalin Mehta, Ankit; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2021) -
Figure of merit for and identification of sub-60 mV/decade devices
Vandenberghe, William; Verhulst, Anne; Soree, Bart; Magnus, Wim; Groeseneken, Guido; Smets, Quentin; Heyns, Marc; Fischetti, Massimo (2013) -
High yield and process uniformity for 300 mm integrated WS2 FETs
Schram, Tom; Smets, Quentin; Radisic, Dunja; Groven, Benjamin; Thiam, Arame; Li, Waikin; Dupuy, Emmanuel; Vandersmissen, Kevin; Maurice, Thibaut; Asselberghs, Inge; Radu, Iuliana (2021) -
Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra
Gupta, Somya; Simoen, Eddy; Loo, Roger; Smets, Quentin; Verhulst, Anne; Lauwaert, Johan; Vrielinck, Henk; Heyns, Marc (2018) -
Impact of device scaling on the electrical properties of MoS2 field-effect transistors
Arutchelvan, Goutham; Smets, Quentin; Verreck, Devin; Ahmed, Zubair; Gaur, Abhinav; Sutar, Surajit; Jussot, Julien; Groven, Benjamin; Heyns, Marc; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2021) -
Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification
Smets, Quentin; Verhulst, Anne; Martens, Koen; Lin, Dennis; El Kazzi, Salim; Verreck, Devin; Simoen, Eddy; Collaert, Nadine; Thean, Aaron; Raskin, Jean-Pierre; Heyns, Marc (2014) -
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs
Panarella, Luca; Kaczer, Ben; Smets, Quentin; Verreck, Devin; Schram, Tom; Cott, Daire; Lin, Dennis; Tyaginov, Stanislav; Asselberghs, Inge; Lockhart de la Rosa, Cesar Javier; Kar, Gouri Sankar; Afanasiev, Valeri (2023) -
Importance of the substrate' s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides
Mo, Jiongjiong; El Kazzi, Salim; Mortelmans, Wouter; Nalin Mehta, Ankit; Sergeant, Stefanie; Smets, Quentin; Asselberghs, Inge; Huyghebaert, Cedric (2020) -
In0.53Ga0.47As diodes for band-to-band tunneling calibration: design, fabrication and characterization
Smets, Quentin; Verhulst, Anne; Rooyackers, Rita; Merckling, Clement; Lin, Dennis; Simoen, Eddy; Alian, AliReza; Mirco, Cantoro; Pourghaderi, Mohammad Ali; Kao, Frank; Verreck, Devin; Collaert, Nadine; Thean, Aaron; Heyns, Marc (2013) -
Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior
El Kazzi, Salim; Alian, AliReza; Bordallo, Caio; Smets, Quentin; Desplanque, Ludovic; Wallart, Xavier; Richard, Olivier; Douhard, Bastien; Verhulst, Anne; Collaert, Nadine; Merckling, Clement; Heyns, Marc; Thean, Aaron (2016) -
InGaAs tunnel diodes for the calibration of semi-classical and quantum-mechanical band-to-band tunneling models
Smets, Quentin; Verreck, Devin; Verhulst, Anne; Rooyackers, Rita; Merckling, Clement; Van de Put, Maarten; Simoen, Eddy; Vandervorst, Wilfried; Collaert, Nadine; Thean, Aaron; Soree, Bart; Groeseneken, Guido; Heyns, Marc (2014) -
Inherent transmission probability limit between valence-band and conduction band states and calibration of tunnel-FET parasitics
Verhulst, Anne; Verreck, Devin; Vandenberghe, William; Smets, Quentin; Mohammed, Mazharuddin; Bizindavyi, Jasper; Heyns, Marc; Soree, Bart; Collaert, Nadine; Mocuta, Anda (2017) -
Introducing 2D-FETs in Device Scaling Roadmap using DTCO
Ahmed, Zubair; Afzalian, Aryan; Schram, Tom; Jang, Doyoung; Verreck, Devin; Smets, Quentin; Schuddinck, Pieter; Chehab, Bilal; Sutar, Surajit; Arutchelvan, Goutham; Soussou, Assawer; Asselberghs, Inge; Spessot, Alessio; Radu, Iuliana; Parvais, Bertrand; Ryckaert, Julien; Na, Myung Hee (2020) -
MBE growth investigations of InxGa1-xAs/GaAsySb1-y systems for TFET performance prediction
El Kazzi, Salim; Smets, Quentin; Rooyackers, Rita; Delmotte, Joris; Geypen, Jef; Verhulst, Anne; Collaert, Nadine; Heyns, Marc; Merckling, Clement; Thean, Aaron (2015) -
MoS2/MoTe2 heterostructure tunnel FETs using gated Schottky contacts
Balaji, Yashwanth; Smets, Quentin; Szabo, Aron; Mascaro, Marco; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana; Luisier, Mathieu; Groeseneken, Guido (2020) -
Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes
Smets, Quentin; Verhulst, Anne; El Kazzi, Salim; Mocuta, Anda; Thean, Aaron; Heyns, Marc (2015) -
Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
Groven, Benjamin; Nalin Mehta, Ankit; Bender, Hugo; Smets, Quentin; Meersschaut, Johan; Franquet, Alexis; Conard, Thierry; Nuytten, Thomas; Verdonck, Patrick; Vandervorst, Wilfried; Heyns, Marc; Radu, Iuliana; Caymax, Matty; Delabie, Annelies (2018) -
Nucleation of 2D WS2 by plasma enhanced atomic layer deposition from WF6, H2 plasma and H2S - Impact on grain size and charge transport
Groven, Benjamin; Nalin Mehta, Ankit; Smets, Quentin; Schram, Tom; Bender, Hugo; Vandervorst, Wilfried; Radu, Iuliana; Caymax, Matty; Heyns, Marc; Delabie, Annelies (2017) -
Overview of scalable transfer approaches to enable epitaxial 2D material integration
Brems, Steven; Ghosh, Souvik; Smets, Quentin; Boulon, Marie-Emmanuelle; Boelen, Andries; Kennes, Koen; Tsai, Hung-Chieh; Chancerel, Francois; Merckling, Clement; Wyndaele, Pieter-Jan; de Marneffe, Jean-Francois; Schram, Tom; Kumar, Pawan; Sergeant, Stefanie; Nuytten, Thomas; De Gendt, Stefan; Medina Silva, Henry; Groven, Benjamin; Morin, Pierre; Kar, Gouri Sankar; Lockhart de la Rosa, Cesar Javier; Yudistira, Didit; Van Campenhout, Joris; Asselberghs, Inge; Phommahaxay, Alain (2023)