Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Conference contributions
Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior
Publication:
Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior
Date
2016
Proceedings Paper
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
33815.pdf
662.29 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
El Kazzi, Salim
;
Alian, AliReza
;
Bordallo, Caio
;
Smets, Quentin
;
Desplanque, Ludovic
;
Wallart, Xavier
;
Richard, Olivier
;
Douhard, Bastien
;
Verhulst, Anne
;
Collaert, Nadine
;
Merckling, Clement
;
Heyns, Marc
;
Thean, Aaron
Journal
Abstract
Description
Metrics
Views
1882
since deposited on 2021-10-23
1
last week
Acq. date: 2025-10-29
Citations
Metrics
Views
1882
since deposited on 2021-10-23
1
last week
Acq. date: 2025-10-29
Citations