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Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior
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Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior
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