Publication:

Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior

Date

2016
Proceedings Paper
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dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorAlian, AliReza
dc.contributor.authorBordallo, Caio
dc.contributor.authorSmets, Quentin
dc.contributor.authorDesplanque, Ludovic
dc.contributor.authorWallart, Xavier
dc.contributor.authorRichard, Olivier
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVerhulst, Anne
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMerckling, Clement
dc.contributor.authorHeyns, Marc
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-23T10:44:03Z
dc.date.available2021-10-23T10:44:03Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26594
dc.identifier.urlhttp://ecst.ecsdl.org/content/72/3/73.abstract
dc.source.beginpage73
dc.source.conferenceInternational Symposium on Functional Diversification of Semiconductor Electronics 3 (More-Than-Moore 3)
dc.source.conferencedate29/05/2016
dc.source.conferencelocationSan Diego, CA USA
dc.source.endpage80
dc.title

Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior

dc.typeProceedings paper
dspace.entity.typePublication
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