Browsing by author "Groven, Benjamin"
Now showing items 1-20 of 60
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2D material integration in the semiconductor industry: Challenges and Solutions
Brems, Steven; Phommahaxay, Alain; Boulon, Marie-Emmanuelle; Verguts, Ken; Leonhardt, Alessandra; Kennes, Koen; Groven, Benjamin; Alessandri, Chiara; Wu, Cheng Han; Achra, Swati; Van Thourhout, Dries; Asselberghs, Inge; Pantouvaki, Marianna; Van Campenhout, Joris; Garello, Kevin; Parui, Subir; De Gendt, Stefan; Huyghebaert, Cedric (2019) -
2D TMDC aging: a case study of monolayer WS2 and mitigation strategies
Wyndaele, Pieter-Jan; de Marneffe, Jean-Francois; Slaets, R.; Groven, Benjamin; Franquet, Alexis; Bruener, P.; Grehl, T.; De Gendt, Stefan (2024) -
300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials
Moussa, Alain; Bogdanowicz, Janusz; Groven, Benjamin; Morin, Pierre; Beggiato, Matteo; Saib, Mohamed; Santoro, G.; Abramovitz, Y.; Houchens, K.; Ben Nissim, S.; Meir, N.; Hung, J.; Urbanowicz, A.; Koret, R.; Turovets, I.; Lorusso, Gian; Charley, Anne-Laure (2023) -
Advanced characterization of 2D materials using SEM image processing and machine learning
Saib, Mohamed; Moussa, Alain; Beggiato, Matteo; Groven, Benjamin; Medina Silva, Henry; Morin, Pierre; Bogdanowicz, Janusz; Kar, Gouri Sankar; Charley, Anne-Laure (2024) -
ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices
Wu, Xiangyu; Lin, Dennis; Cott, Daire; De Marneffe, Jean-Francois; Groven, Benjamin; Sergeant, Stefanie; Shi, Yuanyuan; Smets, Quentin; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana (2021) -
Assessing the prospects of atomic layer deposition for two-dimensional materials in microelectronic applications
Groven, Benjamin; Tomczak, Yoann; Nalin Mehta, Ankit; Bender, Hugo; Zhang, Haodong; Schram, Tom; Smets, Quentin; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies (2018) -
Atomic layer deposition of 2D transition metal dichalogenides
Delabie, Annelies; Caymax, Matty; Groven, Benjamin; Heyne, Markus; Haesevoets, Karel; Meersschaut, Johan; Nuytten, Thomas; Bender, Hugo; Conard, Thierry; Verdonck, Patrick; Van Elshocht, Sven; Heyns, Marc; Barla, Kathy; Radu, Iuliana; Thean, Aaron (2015-10) -
Atomic layer deposition of Ru thin films using the zero-valence precursor EBECH Ru
Adelmann, Christoph; Popovici, Mihaela Ioana; Groven, Benjamin; Moens, Kristof; Meersschaut, Johan; Franquet, Alexis; Swerts, Johan; Delabie, Annelies; Van Elshocht, Sven (2014) -
Atomic layer deposition of ruthenium for advanced interconnect applications
Adelmann, Christoph; Popovici, Mihaela Ioana; Groven, Benjamin; Wen, Liang Gong; Dutta, Shibesh; Boemmels, Juergen; Tokei, Zsolt; Van Elshocht, Sven (2016) -
Atomic layer deposition of ruthenium thin films from (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru: process characteristics, surface chemistry, and film properties
Popovici, Mihaela Ioana; Groven, Benjamin; Marcoen, Kristof; Phung, Quan; Dutta, Shibesh; Swerts, Johan; Meersschaut, Johan; Van den Berg, Jaap; Franquet, Alexis; Moussa, Alain; Vanstreels, Kris; Lagrain, Pieter; Bender, Hugo; Jurczak, Gosia; Van Elshocht, Sven; Delabie, Annelies; Adelmann, Christoph (2017) -
Atomic layer deposition of ruthenium with TiN interface for sub-10nm advanced interconnects beyond copper
Wen, Liang Gong; Roussel, Philippe; Varela Pedreira, Olalla; Briggs, Basoene; Groven, Benjamin; Dutta, Shibesh; Popovici, Mihaela Ioana; Heylen, Nancy; Ciofi, Ivan; Vanstreels, Kris; Osterberg, Frederik; Hansen, Ole; Petersen, Dirch H.; Opsomer, Karl; Detavernie, Christophe; Wilson, Chris; Van Elshocht, Sven; Croes, Kristof; Bommels, Jurgen; Tokei, Zsolt; Adelmann, Christoph (2016-09) -
Atomic layer processing of 2D materials for beyond CMOS applications
Delabie, Annelies; Caymax, Matty; Groven, Benjamin; Heyne, Markus; Zhang, Haodong; Chiappe, Daniele; Heyns, Marc; Radu, Iuliana (2016) -
BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line
Schram, Tom; Smets, Quentin; Heyne, Markus; Groven, Benjamin; Kunnen, Eddy; Thiam, Arame; Devriendt, Katia; Delabie, Annelies; Lin, Dennis; Chiappe, Daniele; Asselberghs, Inge; Lux, Marcel; Brus, Stephan; Huyghebaert, Cedric; Sayan, Safak; Juncker, Aurélie; Caymax, Matty; Radu, Iuliana (2017) -
Challenges and opportunities for Atomic Layer Deposition of 2D transition metal dichalcogenides
Delabie, Annelies; Groven, Benjamin; Heyne, Markus; Zhang, Haodong; Tomczak, Yoann; Caymax, Matty; Radu, Iuliana (2016) -
Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface
Kandybka, Iryna; Groven, Benjamin; Medina Silva, Henry; Sergeant, Stefanie; Nalin Mehta, Ankit; Koylan, Serkan; Shi, Yuanyuan; Banerjee, Sreetama; Morin, Pierre; Delabie, Annelies (2024) -
Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low temperature
Groven, Benjamin; Claes, Dieter; Nalin Mehta, Ankit; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies (2019) -
Comparative study of the growth behaviour of 2D WS2 by Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD), and the impact on the 2D crystal structure
Groven, Benjamin; Claes, Dieter; Heyne, Markus; Meersschaut, Johan; Nuytten, Thomas; Richard, Olivier; Bender, Hugo; Conard, Thierry; Verdonck, Patrick; Van Elshocht, Sven; Radu, Iuliana; Thean, Aaron; Heyns, Marc; Caymax, Matty; Delabie, Annelies (2016) -
Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism
Serron, Jill; Minj, Albert; Spampinato, Valentina; Franquet, Alexis; Rybalchenko, Yevhenii; Boulon, Marie-Emmanuelle; Brems, Steven; Shi, Yuanyuan; Groven, Benjamin; Villarreal, Renan; Conard, Thierry; van der Heide, Paul; Hantschel, Thomas; Medina Silva, Henry (2023-05-17) -
Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS2 via Combined C-AFM and ToF-SIMS Characterization
Spampinato, Valentina; Shi, Yuanyuan; Serron, Jill; Minj, Albert; Groven, Benjamin; Hantschel, Thomas; van der Heide, Paul; Franquet, Alexis (2023) -
Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg
Wu, Xiangyu; Cott, Daire; Lin, Zaoyang; Shi, Yuanyuan; Groven, Benjamin; Morin, Pierre; Verreck, Devin; Smets, Quentin; Medina, Henry; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana; Lin, Dennis (2021)