Browsing by author "Asselberghs, Inge"
Now showing items 1-20 of 133
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2D material integration in the semiconductor industry: Challenges and Solutions
Brems, Steven; Phommahaxay, Alain; Boulon, Marie-Emmanuelle; Verguts, Ken; Leonhardt, Alessandra; Kennes, Koen; Groven, Benjamin; Alessandri, Chiara; Wu, Cheng Han; Achra, Swati; Van Thourhout, Dries; Asselberghs, Inge; Pantouvaki, Marianna; Van Campenhout, Joris; Garello, Kevin; Parui, Subir; De Gendt, Stefan; Huyghebaert, Cedric (2019) -
2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
300mm wafer level WS2 p-MOS capacitor characterization, smulation, and analysis
Koladi Mootheri, Vivek; Okuyama, Atsushi; Smets, Quentin; Schram, Tom; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Lin, Dennis (2020) -
4-Channel C-band WDM transmitter based on 10 GHz graphene-silicon electro-absorption modulators
Alessandri, Chiara; Asselberghs, Inge; De Heyn, Peter; Brems, Steven; Huyghebaert, Cedric; Van Campenhout, Joris; Van Thourhout, Dries; Pantouvaki, Marianna (2019) -
5 x 25 Gbit/s WDM transmitters based on passivated graphene-silicon electro-absorption modulators
Alessandri, Chiara; Asselberghs, Inge; Brems, Steven; Huyghebaert, Cedric; Van Campenhout, Joris; Van Thourhout, Dries; Pantouvaki, Marianna (2020-02) -
A large scale systematic study of graphene/metal contact resistance using cTLM
Politou, Maria; Liu, Enlong; Asselberghs, Inge; Lee, ChangSeung; Martens, Koen; Radu, Iuliana; Tokei, Zsolt; Huyghebaert, Cedric; De Gendt, Stefan; Heyns, Marc (2014) -
A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
Gaur, Abhinav; Agarwal, Tarun; Asselberghs, Inge; Radu, Iuliana; Heyns, Marc; Lin, Dennis (2020) -
Accurate determination of interlayer resistivity of 2-D layered systems: graphene case study
Nashed, Ramy; Pan, Chenyun; Wu, Xiangyu; Asselberghs, Inge; Tokei, Zsolt; Catthoor, Francky; Naeemi, Azad (2020) -
Advanced EUV patterning of 2D TMDs for CMOS integration
Faramarzi, Vina; de Poortere, Etienne; Venugopalan, Syam Parayil; Woltgens, Pieter; Woo, Youngtag; van de Kerkhof, Mark; Kumar, Pawan; Medina Silva, Henry; Morin, Pierre; Asselberghs, Inge; Dorow, Chelsey; O'Brien, Kevin; Maxey, Kirby; Avci, Uygar (2024) -
ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices
Wu, Xiangyu; Lin, Dennis; Cott, Daire; De Marneffe, Jean-Francois; Groven, Benjamin; Sergeant, Stefanie; Shi, Yuanyuan; Smets, Quentin; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana (2021) -
All-electrical control of scaled spin logic devices based on domain wall motion
Raymenants, Eline; Wan, Danny; Couet, Sebastien; Souriau, Laurent; Thiam, Arame; Tsvetanova, Diana; Canvel, Yann; Asselberghs, Inge; Heyns, Marc; Nikonov, D. E.; Young, I. A.; Pizzini, S.; Nguyen, Van Dai; Radu, Iuliana (2020) -
All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion
Raymenants, Eline; Wan, Danny; Couet, Sebastien; Souriau, Laurent; Thiam, Arame; Tsvetanova, Diana; Canvel, Yann; Garello, Kevin; Kar, Gouri Sankar; Heyns, Marc; Asselberghs, Inge; Nikonov, Dmitri E.; Young, Ian A.; Pizzini, Stefania; Radu, Iuliana; Nguyen, Van Dai (2021) -
Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2
Gaur, Abhinav; Chiappe, Daniele; Lin, Dennis; Cott, Daire; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana (2019) -
Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
Schoenaers, Ben; Leonhardt, Alessandra; Nalin Mehta, Ankit; Stesmans, Andre; Chiappe, Daniele; Asselberghs, Inge; Radu, Iuliana; Huyghebaert, Cedric; De Gendt, Stefan; Houssa, Michel; Afanas'ev, Valeri V. (2020) -
Bandwidth analysis and optimisation of graphene-Si electro-absorption modulators
Alessandri, Chiara; Pantouvaki, Marianna; Asselberghs, Inge; Huyghebaert, Cedric; Van Thourhout, Dries; Van Campenhout, Joris (2017) -
BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line
Schram, Tom; Smets, Quentin; Heyne, Markus; Groven, Benjamin; Kunnen, Eddy; Thiam, Arame; Devriendt, Katia; Delabie, Annelies; Lin, Dennis; Chiappe, Daniele; Asselberghs, Inge; Lux, Marcel; Brus, Stephan; Huyghebaert, Cedric; Sayan, Safak; Juncker, Aurélie; Caymax, Matty; Radu, Iuliana (2017) -
Boosting carrier mobility of synthetic few layer graphene on SiO2 by interlayer rotation and decoupling
Wu, Xiangyu; Chuang, Yaoteng; Contino, Antonino; Soree, Bart; Brems, Steven; Tokei, Zsolt; Heyns, Marc; Huyghebaert, Cedric; Asselberghs, Inge (2018) -
Bringing 2D material integration from the lab to the fab
Huyghebaert, Cedric; Schram, Tom; Brems, Steven; Asselberghs, Inge; Chiappe, Daniele; Radu, Iuliana (2017) -
Broadband 10Gb/s graphene electro-absorption modulator on silicon for chip-level optical interconnects
Hu, Yingto; Pantouvaki, Marianna; Brems, Steven; Asselberghs, Inge; Huyghebaert, Cedric; Geisler, Matthias; Alessandri, Chiara; Baets, Roel; Absil, Philippe; Van Thourhout, Dries; Van Campenhout, Joris (2014) -
Broadband 10Gb/s operation of graphene electro-absorption modulator on silicon
Hu, Yingtao; Pantouvaki, Marianna; Van Campenhout, Joris; Brems, Steven; Asselberghs, Inge; Huyghebaert, Cedric; Absil, Philippe; Van Thourhout, Dries (2016)