Browsing by author "Verreck, Devin"

15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors

Verreck, Devin; Van de Put, Maarten; Verhulst, Anne; Soree, Bart; Magnus, Wim; Dabral, Ashish; Thean, Aaron; Groeseneken, Guido (2015)

2D materials: roadmap to CMOS integration

Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018)

3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory

Verreck, Devin; Arreghini, Antonio; Schanovsky, Franz; Stanojevic, Zlatan; Steiner, K.; Mitterbauer, F.; Karner, Markus; Van den Bosch, Geert; Furnemont, Arnaud (2019)

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics

Schanovsky, F.; Rzepa, G.; Stanojevic, Z.; Kernstock, C.; Baumgartner, O.; Karner, M.; Verreck, Devin; Arreghini, Antonio; Rosmeulen, Maarten (2021)

An inner gate as enabler for vertical pitch scaling in macaroni channel gate-all-around 3-D NAND flash memory

Verreck, Devin; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten (2023)

Application of single pulse dynamics to model program anderase cycling-induced defects in the tunnel oxide of charge-trapping devices

Bastos, Joao; Arreghini, Antonio; Verreck, Devin; Schanovsky, Franz; Degraeve, Robin; Linten, Dimitri; Van den Bosch, Geert; Furnemont, Arnaud (2019)

At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells

Rachidi, Sana; Arreghini, Antonio; Verreck, Devin; Donadio, Gabriele Luca; Banerjee, Kaustuv; Katcko, Kostantine; Oniki, Yusuke; Van den Bosch, Geert; Rosmeulen, Maarten (2022)

Band-tails tunneling resolving the theory-experiment discrepancy in Esaki diodes

Bizindavyi, Jasper; Verhulst, Anne; Smets, Quentin; Verreck, Devin; Soree, Bart; Groeseneken, Guido (2018)

Band-to-band tunneling MOSCAPs for rapid TFET characterization

Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014)

Beyond-Si materials and devices for more Moore and more than Moore applications

Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016)

Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors

Verreck, Devin; Verhulst, Anne; Xiang, Yang; Yakimets, Dmitry; El Kazzi, Salim; Parvais, Bertrand; Groeseneken, Guido; Collaert, Nadine; Mocuta, Anda (2018)

Calibration of the high-doping induced ballistic band-tails tunneling current in In0.53Ga0.47As Esaki diodes

Bizindavyi, Jasper; Verhulst, Anne; Smets, Quentin; Verreck, Devin; Collaert, Nadine; Mocuta, Anda; Soree, Bart; Groeseneken, Guido (2017)

Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?

Verhulst, Anne; Verreck, Devin; Pourghaderi, Mohammad Ali; Van de Put, Maarten; Soree, Bart; Groeseneken, Guido; Collaert, Nadine; Thean, Aaron (2014)

Cyclic Thermal Effects on Devices of Two-Dimensional Layered Semiconducting Materials

Kim, Yeonsu; Kaczer, Ben; Verreck, Devin; Grill, Alexander; Kim, Doyoon; Song, Jaeick; Diaz Fortuny, Javier; Vici, Andrea; Park, Jongseon; Van Beek, Simon; Simicic, Marko; Bury, Erik; Vaisman Chasin, Adrian; Linten, Dimitri; Lee, Jaewoo; Chun, Jungu; Kim, Seongji; Seo, Beumgeun; Choi, Junhee; Shim, Joon Hyung; Lee, Kookjin; Kim, Gyu-Tae (2021)

Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

Lee, Kookjin; Ji, Hyunjin; Kim, Yanghee; Kaczer, Ben; Lee, Hyebin; Ahn, Jae-Pyoung; Choi, Junhee; Grill, Alexander; Panarella, Luca; Smets, Quentin; Verreck, Devin; Van Beek, Simon; Vaisman Chasin, Adrian; Linten, Dimitri; Na, Junhong; Lee, Jae Woo; De Wolf, Ingrid; Kim, Gyu-Tae (2022)

Device and circuit level gate configuration optimization for monolayer 2D material feld-effect transistors

Verreck, Devin; Arutchelvan, Goutham; Heyns, Marc; Radu, Iuliana (2019)

Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

Wu, Xiangyu; Cott, Daire; Lin, Zaoyang; Shi, Yuanyuan; Groven, Benjamin; Morin, Pierre; Verreck, Devin; Smets, Quentin; Medina, Henry; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana; Lin, Dennis (2021)