Browsing by author "Kaczer, Ben"
Now showing items 1-20 of 631
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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Menou, Nicolas; Wang, Xin Peng; Kaczer, Ben; Polspoel, Wouter; Popovici, Mihaela Ioana; Opsomer, Karl; Pawlak, Malgorzata; Knaepen, W.; Detavernier, C.; Blomberg, T.; Pierreux, D.; Swerts, Johan; Maes, Jan; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2008) -
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004) -
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
A BSIM-Based Predictive Hot-Carrier Aging Compact Model
Xiang, Yang; Tyaginov, Stanislav; Vandemaele, Michiel; Wu, Zhicheng; Franco, Jacopo; Bury, Erik; Truijen, Brecht; Parvais, Bertrand; Linten, Dimitri; Kaczer, Ben (2021) -
A CMOS circuit for evaluating the NBTI over a wide frequency range
Fernandez-Garcia, Raul; Kaczer, Ben; Groeseneken, Guido (2009) -
A Compact Physics Analytical Model for Hot-Carrier Degradation
Tyaginov, Stanislav; Grill, Alexander; Vandemaele, Michiel; Grasser, Tibor; Hellings, Geert; Makarov, Alexander; Jech, Markus; Linten, Dimitri; Kaczer, Ben (2020) -
A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach
Popovici, Mihaela Ioana; Tomida, Kazuyuki; Swerts, Johan; Favia, Paola; Delabie, Annelies; Bender, Hugo; Adelmann, Christoph; Tielens, Hilde; Brijs, Bert; Kaczer, Ben; Pawlak, Malgorzata; Kim, Min-Soo; Altimime, Laith; Van Elshocht, Sven; Kittl, Jorge (2011) -
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes
Crupi, F.; Kaczer, Ben; Degraeve, Robin; De Keersgieter, An; Groeseneken, Guido (2003) -
A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays
Grill, Alexander; Michl, J.; Diaz Fortuny, Javier; Beckers, Arnout; Bury, Erik; Vaisman Chasin, Adrian; Grasser, T.; Waltl, M.; Kaczer, Ben; De Greve, Kristiaan (2023) -
A comprehensive model for correlated drain and gate current fluctuations
Goes, Wolfgang; Toledano Luque, Maria; Baumgartner, O.; Schanovsky, Frank; Kaczer, Ben; Grasser, Tibor (2013) -
A comprehensive variability study of doped HfO2 FeFET for memory applications
Ronchi, Nicolo; Ragnarsson, Lars-Ake; Celano, Umberto; Kaczer, Ben; Kaczmarek, Jakub; Banerjee, Kaustuv; McMitchell, Sean; Van den Bosch, Geert; Van Houdt, Jan (2022) -
A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Simoen, Eddy; Arreghini, Antonio; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2010) -
A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
Procel, Luis Miguel; Crupi, Felice; Lionel, Trojman; Franco, Jacopo; Kaczer, Ben (2016) -
A defect-centric perspective on channel hot carrier variability in nMOSFETs
Procel, Luis Miguel; Crupi, Felice; Franco, Jacopo; Trojman, Lionel; Kaczer, Ben; Wils, N.; Tuinhout, H. (2015) -
A disorder-controlled-kinetics model for Negative Bias Temperature Instability and its experimental verification
Kaczer, Ben; Arkhipov, Vladimir; Degraeve, Robin; Collaert, Nadine; Groeseneken, Guido; Goodwin, Michael (2005-04) -
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer NMOSFETs
Sharma, P.; Tyaginov, S.; Rauch, S.E.; Franco, Jacopo; Kaczer, Ben; Makarov, A.; Vexler, M.I.; Grasser, T. (2016) -
A ferroelectric capacitor model accounting for the switching kinetics and polarization relaxation
Bartic, Andrei; Kaczer, Ben; Wouters, Dirk; Maes, Herman (2001) -
A fully-integrated method for RTN parameter extraction
Simicic, Marko; Morrison, Sebastien; Parvais, Bertrand; Weckx, Pieter; Kaczer, Ben; Sawada, Ken; Ammo, Hiroaki; Yamakawa, Shinya; Nomoto, Kazuki; Ono, Makoto; Linten, Dimitri; Verkest, Diederik; Wambacq, Piet; Groeseneken, Guido; Gielen, Georges (2017) -
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices
Buscemi, F.; Piccinini, E.; Vandelli, L.; Nardi, F.; Padovani, A.; Kaczer, Ben; Garbin, Daniele; Clima, Sergiu; Degraeve, Robin; Kar, Gouri Sankar; Tavanti, F.; Slassi, A.; Calzolari, A.; Larcher, L. (2023)