Publication:

Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

Date

2021
Proceedings Paper
https://doi.org/10.1109/iedm19574.2021.9720517
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Published version 1.52 MB

Author(s)

Smets, Quentin  
;
Schram, Tom  
;
Verreck, Devin  
;
Cott, Daire  
;
Groven, Benjamin  
;
Ahmed, Zubair  
;
Kaczer, Ben  
;
Mitard, Jerome  
;
Wu, Xiangyu  
;
Kundu, Souvik  
;
Mertens, Hans  
;
Radisic, Dunja  
;
Thiam, Arame  
;
Li, Waikin  
;
Dupuy, Emmanuel  
;
Tao, Zheng  
;
Vandersmissen, Kevin  
;
Maurice, Thibaut  
;
Lin, Dennis  
;
Morin, Pierre  
;
Asselberghs, Inge  
;
Radu, Iuliana  

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na

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