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Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB
Publication:
Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB
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Date
2021
Proceedings Paper
https://doi.org/10.1109/IEDM19574.2021.9720517
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Smets, Quentin
;
Schram, Tom
;
Verreck, Devin
;
Cott, Daire
;
Groven, Benjamin
;
Ahmed, Zubair
;
Kaczer, Ben
;
Mitard, Jerome
;
Wu, Xiangyu
;
Kundu, Souvik
;
Mertens, Hans
;
Radisic, Dunja
;
Thiam, Arame
;
Li, Waikin
;
Dupuy, Emmanuel
;
Tao, Zheng
;
Vandersmissen, Kevin
;
Maurice, Thibaut
;
Lin, Dennis
;
Morin, Pierre
;
Asselberghs, Inge
;
Radu, Iuliana
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na
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1146
since deposited on 2023-06-20
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last month
Acq. date: 2025-12-15
Citations
Metrics
Views
1146
since deposited on 2023-06-20
2
last month
Acq. date: 2025-12-15
Citations