Now showing items 1-20 of 23

    • 300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials 

      Moussa, Alain; Bogdanowicz, Janusz; Groven, Benjamin; Morin, Pierre; Beggiato, Matteo; Saib, Mohamed; Santoro, G.; Abramovitz, Y.; Houchens, K.; Ben Nissim, S.; Meir, N.; Hung, J.; Urbanowicz, A.; Koret, R.; Turovets, I.; Lorusso, Gian; Charley, Anne-Laure (2023)
    • Buried power rail integration with FinFETs for ultimate CMOS scaling 

      Gupta, Anshul; Varela Pedreira, Olalla; Arutchelvan, Goutham; Zahedmanesh, Houman; Devriendt, Katia; Hanssen, Frederik; Tao, Zheng; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, Noemie; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min-Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Cousserier, Joris; Yakimets, Dmitry; Lazzarino, Frederic; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Jaysankar, Manoj; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Boemmels, Juergen; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto (2020)
    • Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node 

      Gupta, Anshul; Mertens, Hans; Tao, Zheng; Demuynck, Steven; Boemmels, Juergen; Arutchelvan, Goutham; Devriendt, Katia; Varela Pedreira, Olalla; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Zahedmanesh, Houman; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, N.; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Yakimets, Dmitry; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Cousserier, Joris; Jaysankar, Manoj; Lazzarino, Frederic; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Tokei, Zsolt; Horiguchi, Naoto (2020)
    • Buried Power Rail Scaling and Metal Assessment for the 3 nm Node and Beyond 

      Gupta, Anshul; Varela Pedreira, Olalla; Tao, Zheng; Mertens, Hans; Radisic, Dunja; Jourdan, Nicolas; Devriendt, Katia; Heylen, Nancy; Wang, Shouhua; Chehab, Bilal; Jang, Doyoung; Hellings, Geert; Sebaai, Farid; Lorant, Christophe; Teugels, Lieve; Peter, Antony; Chan, BT; Schleicher, Filip; Demonie, Ingrid; Marien, Philippe; Sepulveda Marquez, Alfonso; Richard, Olivier; Nagesh, Nishanth; Lesniewska, Alicja; Lazzarino, Frederic; Ryckaert, Julien; Morin, Pierre; Altamirano Sanchez, Efrain; Murdoch, Gayle; Boemmels, Juergen; Demuynck, Steven; Na, Myung Hee; Tokei, Zsolt; Biesemans, Serge; Dentoni Litta, Eugenio; Horiguchi, Naoto (2020)
    • Chemical Vapor Deposition of a Single-Crystalline MoS<sub>2</sub> Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface 

      Kandybka, Iryna; Groven, Benjamin; Medina Silva, Henry; Sergeant, Stefanie; Nalin Mehta, Ankit; Koylan, Serkan; Shi, Yuanyuan; Banerjee, Sreetama; Morin, Pierre; Delabie, Annelies (2024)
    • Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg 

      Wu, Xiangyu; Cott, Daire; Lin, Zaoyang; Shi, Yuanyuan; Groven, Benjamin; Morin, Pierre; Verreck, Devin; Smets, Quentin; Medina, Henry; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana; Lin, Dennis (2021)
    • Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films 

      Peter, Antony; Sepulveda Marquez, Alfonso; Meersschaut, Johan; Dara, Praveen; Blanquart, Timothee; Tomomi, Takayama; Taishi, Ebisudani; Elichiro, Shiba; Kimura, Yosuke; Van Gompel, Sander; Morin, Pierre (2022)
    • Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes 

      Tomomi, Takayama; Taishi, Ebisudani; Eiichiro, Shiba; Sepulveda Marquez, Alfonso; Blanquart, Timothee; Kimura, Yosuke; Subramanian, Sujith; Baudot, Sylvain; Briggs, Basoene; Gupta, Anshul; Veloso, Anabela; Capogreco, Elena; Mertens, Hans; Meersschaut, Johan; Conard, Thierry; Dara, Praveen; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Batuk, Dmitry; Demuynck, Steven; Morin, Pierre (2021)
    • Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics 

      Shi, Yuanyuan; Groven, Benjamin; Serron, Jill; Wu, Xiangyu; Nalin Mehta, Ankit; Minj, Albert; Sergeant, Stefanie; Han, Han; Asselberghs, Inge; Lin, Dennis; Brems, Steven; Huyghebaert, Cedric; Morin, Pierre; Radu, Iuliana; Caymax, Matty (2021)
    • Fin bending in dimensional scaling 

      Zhang, Liping; Hellin, David; Sepulveda Marquez, Alfonso; Altamirano Sanchez, Efrain; Lazzarino, Frederic; Morin, Pierre; Wang, Shouhua; Hopf, Toby; Kenis, Karine; Lorant, Christophe; Sebaai, Farid; Batuk, Dmitry; Briggs, Basoene; Mertens, Hans; Demuynck, Steven (2020)
    • First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers 

      Subramanian, Sujith; Hosseini, Maryam; Chiarella, Thomas; Sarkar, Satadru; Schuddinck, Pieter; Chan, BT; Radisic, Dunja; Mannaert, Geert; Hikavyy, Andriy; Rosseel, Erik; Sebaai, Farid; Peter, Antony; Hopf, Toby; Morin, Pierre; Wang, Shouhua; Devriendt, Katia; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Veloso, Anabela; Dentoni Litta, Eugenio; Baudot, Sylvain; Siew, Yong Kong; Zhou, X.; Briggs, Basoene; Capogreco, Elena; Hung, Joey; Koret, R.; Spessot, Alessio; Ryckaert, Julien; Demuynck, Steven; Horiguchi, Naoto; Boemmels, Juergen (2020)
    • Inflection points in interconnect research and trends for 2nm and beyond in order to solve the RC bottleneck 

      Tokei, Zsolt; Vega Gonzalez, Victor; Murdoch, Gayle; O'Toole, Martin; Croes, Kristof; Baert, Rogier; van der Veen, Marleen; Adelmann, Christoph; Soulie, Jean-Philippe; Boemmels, Juergen; Wilson, Chris; Park, Seongho; Sankaran, Kiroubanand; Pourtois, Geoffrey; Swerts, Johan; Paolillo, Sara; Decoster, Stefan; Mao, Ming; Lazzarino, Frederic; Versluijs, Janko; Blanco, Victor; Ercken, Monique; Kesters, Els; Le, Quoc Toan; Holsteyns, Frank; Heylen, Nancy; Teugels, Lieve; Devriendt, Katia; Struyf, Herbert; Morin, Pierre; Jourdan, Nicolas; Van Elshocht, Sven; Ciofi, Ivan; Gupta, Anshul; Zahedmanesh, Houman; Vanstreels, Kris; Na, Myung Hee (2020)
    • New bending mode in SAQP Si fins and its mitigation 

      Sepulveda Marquez, Alfonso; Hellin, David; Zhang, Liping; Kenis, Karine; Batuk, Dmitry; Baudot, Sylvain; Briggs, Basoene; Mountsier, Tom; Barla, Kathy; Morin, Pierre; Altamirano Sanchez, Efrain (2022)
    • Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition 

      Tang, Haonan; Pasko, Sergej; Krotkus, Simonas; Anders, Thorsten; Wockel, Cornelia; Mischke, Jan; Wang, Xiaochen; Conran, Ben; McAleese, Clifford; Teo, Ken; Banerjee, Sreetama; Medina Silva, Henry; Morin, Pierre; Asselberghs, Inge; Ghiami, Amir; Grundmann, Annika; Tang, Songyao; Fiadziushkin, Hleb; Kalisch, Holger; Vescan, Andrei; El Kazzi, Salim; Marty, Alain; Dosenovic, Djordje; Okuno, Hanako; Le Van-Jodin, Lucie; Heuken, Michael (2023)
    • Overview of scalable transfer approaches to enable epitaxial 2D material integration 

      Brems, Steven; Ghosh, Souvik; Smets, Quentin; Boulon, Marie-Emmanuelle; Boelen, Andries; Kennes, Koen; Tsai, Hung-Chieh; Chancerel, Francois; Merckling, Clement; Wyndaele, Pieter-Jan; de Marneffe, Jean-Francois; Schram, Tom; Kumar, Pawan; Sergeant, Stefanie; Nuytten, Thomas; De Gendt, Stefan; Medina Silva, Henry; Groven, Benjamin; Morin, Pierre; Kar, Gouri Sankar; Lockhart de la Rosa, Cesar Javier; Yudistira, Didit; Van Campenhout, Joris; Asselberghs, Inge; Phommahaxay, Alain (2023)
    • Properties of ultrathin molybdenum films for interconnect applications 

      Founta, Valeria; Soulie, Jean-Philippe; Sankaran, Kiroubanand; Vanstreels, Kris; Opsomer, Karl; Morin, Pierre; Lagrain, Pieter; Franquet, Alexis; Vanhaeren, Danielle; Conard, Thierry; Meersschaut, Johan; Detavernier, Christophe; Van de Vondel, Joris; De Wolf, Ingrid; Pourtois, Geoffrey; Tokei, Zsolt; Swerts, Johan; Adelmann, Christoph (2022)
    • Scaled transistors with 2D materials from the 300mm fab 

      Asselberghs, Inge; Schram, Tom; Smets, Quentin; Groven, Benjamin; Brems, Steven; Phommahaxay, Alain; Cott, Daire; Dupuy, Emmanuel; Radisic, Dunja; de Marneffe, Jean-Francois; Thiam, Arame; Li, Waikin; Devriendt, Katia; Gaur, Abhinav; Verreck, Devin; Maurice, Thibaut; Lin, Dennis; Morin, Pierre; Radu, Iuliana (2020)
    • Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB 

      Smets, Quentin; Schram, Tom; Verreck, Devin; Cott, Daire; Groven, Benjamin; Ahmed, Zubair; Kaczer, Ben; Mitard, Jerome; Wu, Xiangyu; Kundu, Souvik; Mertens, Hans; Radisic, Dunja; Thiam, Arame; Li, Waikin; Dupuy, Emmanuel; Tao, Zheng; Vandersmissen, Kevin; Maurice, Thibaut; Lin, Dennis; Morin, Pierre; Asselberghs, Inge; Radu, Iuliana (2021)
    • Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substratesâ 

      Rybalchenko, Yevhenii; Minj, Albert; Medina Silva, Henry; Villarreal, R.; Groven, Benjamin; Lin, Dennis; Pereira, L. M. C.; Morin, Pierre; Hantschel, Thomas; Afanasiev, Valeri (2023)
    • Size-dependent optical properties of periodic arrays of semiconducting nanolines 

      Gawlik, Andrzej; Bogdanowicz, Janusz; Schulze, Andreas; Morin, Pierre; Misiewicz, Jan; Vandervorst, Wilfried (2020)