Browsing by author "Mitard, Jerome"
Now showing items 1-20 of 326
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1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
Lee, Jae Woo; Cho, Moon Ju; Simoen, Eddy; Ritzenthaler, Romain; Togo, Mitsuhiro; Boccardi, Guillaume; Mitard, Jerome; Ragnarsson, Lars-Ake; Chiarella, Thomas; Veloso, Anabela; Horiguchi, Naoto; Thean, Aaron; Groeseneken, Guido (2013-03) -
12-EUV layer Surrounding Gate Transistor (SGT) for vertical 6-T SRAM: 5-nm-class technology for ultra-density logic devices
Kim, Min-Soo; Harada, N.; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Huynh Bao, Trong; Matagne, Philippe; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Jourdan, Nicolas; Sepulveda Marquez, Alfonso; Puliyalil, Harinarayanan; Jamieson, Geraldine; van der Veen, Marleen; Teugels, Lieve; El-Mekki, Zaid; Altamirano Sanchez, Efrain; Li, Y.; Nakamura, H.; Mocuta, Dan; Matsuoka, F. (2019) -
15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV Lithography
Kim, Il Hwan; Kim, Insung; Park, Changmin; Lee, Jsiun; Ryu, Koungmin; De Schepper, P.; Doise, J.; Kocsis, M.; De Simone, Danilo; Kljucar, Luka; Das, Poulomi; Blanc, Romuald; Beral, Christophe; Severi, Joren; Vandenbroeck, Nadia; Foubert, Philippe; Charley, Anne-Laure; Oak, Apoorva; Xu, Dongbo; Gillijns, Werner; Mitard, Jerome; Tokei, Zsolt; van der Veen, Marleen; Heylen, Nancy; Teugels, Lieve; Le, Quoc Toan; Schleicher, Filip; Leray, Philippe; Ronse, Kurt (2021) -
3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs
Reaz, Mahmud; Tonigan, Andrew M.; Li, Kan; Smith, M. Brandon; Rony, Mohammed W.; Gorchichko, Mariia; O'Hara, Andrew; Linten, Dimitri; Mitard, Jerome; Fang, Jingtian; Zhang, En Xia; Alles, Michael L.; Weller, Robert A.; Fleetwood, Daniel M.; Reed, Robert A.; Fischetti, Massimo, V; Pantelides, Sokrates T.; Weeden-Wright, Stephanie L.; Schrimpf, Ronald D. (2021) -
300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility
Kljucar, Luka; Smets, Quentin; van Setten, Michiel; Mitard, Jerome; Belmonte, Attilio; Dekkers, Harold; Teugels, Lieve; Mao, Ming; Puliyalil, Harinarayanan; del Agua Borniquel, Jose Ignacio; Delhougne, Romain; Sankaran, Kiroubanand; Tokei, Zsolt (2020) -
3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters
Vandooren, Anne; Wu, Zhicheng; Parihar, Narendra; Franco, Jacopo; Parvais, Bertrand; Matagne, Philippe; Debruyn, Haroen; Mannaert, Geert; Devriendt, Katia; Teugels, Lieve; Vecchio, Emma; Radisic, Dunja; Rosseel, Erik; Hikavyy, Andriy; Chan, BT; Waldron, Niamh; Mitard, Jerome; Besnard, G.; Alvarez, A.; Gaudin, G.; Schwarzenbach, W.; Radu, I.; Nguyen, B. Y.; Huet, K.; Tabata, T.; Mazzamuto, F.; Demuynck, Steven; Boemmels, Juergen; Collaert, Nadine; Horiguchi, Naoto (2020) -
3D-carrier profiling and parasitic resistance analysis in vertically stacked gate-all-around Si nanowire CMOS transistors
Eyben, Pierre; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Veloso, Anabela; Mertens, Hans; Pena, Vanessa; Santoro, Gaetano; Machillot, Jerome; Kim, Myungsun; Miyashita, Toshihiko; Yoshida, Naomi; Bender, Hugo; Richard, Olivier; Celano, Umberto; Paredis, Kristof; Wouters, Lennaert; Mitard, Jerome; Horiguchi, Naoto (2019) -
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Mitard, Jerome; Witters, Liesbeth; Eneman, Geert; Hellings, Geert; Pantisano, Luigi; Hikavyy, Andriy; Loo, Roger; Eyben, Pierre; Horiguchi, Naoto; Thean, Aaron (2012) -
A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs
Mitard, Jerome; Witters, Liesbeth; Sasaki, Yuichiro; Arimura, Hiroaki; Schulze, Andreas; Loo, Roger; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Cott, Daire; Chiarella, Thomas; Kubicek, Stefan; Mertens, Hans; Ritzenthaler, Romain; Vrancken, Christa; Favia, Paola; Bender, Hugo; Horiguchi, Naoto; Barla, Kathy; Mocuta, Dan; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2016-06) -
A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs
Ma, Jigang; Zhang, Wei Dong; Zhang, Jian Fu; Benbakhti, Brahim; Li, Zhigang; Mitard, Jerome; Arimura, Hiroaki (2016) -
A fast and accurate method to study the impact of interface traps on germanium MOS performance
Hellings, Geert; Eneman, Geert; Mitard, Jerome; Martens, Koen; Wang, Wei-E; Hoffmann, Thomas Y.; Meuris, Marc; De Meyer, Kristin (2011) -
A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation
Arimura, Hiroaki; Cott, Daire; Boccardi, Guillaume; Loo, Roger; Wostyn, Kurt; Brus, Stephan; Capogreco, Elena; Opdebeeck, Ann; Witters, Liesbeth; Conard, Thierry; Suhard, Samuel; van Dorp, Dennis; Kenis, Karine; Ragnarsson, Lars-Ake; Mitard, Jerome; Holsteyns, Frank; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019-06) -
AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction
Ma, J.; Zhang, W.; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Franco, Jacopo; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Groeseneken, Guido (2015) -
Accurate prediction of device performance in sub-10nm WFIN FinFETs using scalpel SSRM-based calibration of process simulations
Eyben, Pierre; Matagne, Philippe; Chiarella, Thomas; De Keersgieter, An; Kubicek, Stefan; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Mocuta, Dan (2016) -
Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs
Xing, Guo; Hatchtel, Jordan; Linten, Dimitri; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Pantelides, Sokrates (2015-09) -
Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-D-IT Si-cap-free Gate Stack and Optimizing the Channel Strain
Arimura, Hiroaki; Capogreco, Elena; Wostyn, Kurt; Eneman, Geert; Ragnarsson, Lars-Ake; Brus, Stephan; Baudot, Sylvain; Peter, Antony; Schram, Tom; Favia, Paola; Richard, Olivier; Bender, Hugo; Mitard, Jerome; Horiguchi, Naoto (2020) -
Advanced channel materials for the semiconductor industry
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Lin, Dennis; Mitard, Jerome; Sioncke, Sonja; Waldron, Niamh; Witters, Liesbeth; Zhou, Daisy; Thean, Aaron (2015)