Browsing by author "Mitard, Jerome"
Now showing items 21-40 of 325
-
Advanced semiconductor devices for future CMOS technologies
Claeys, Cor; Chiappe, Daniele; Collaert, Nadine; Mitard, Jerome; Radu, Iuliana; Rooyackers, Rita; Simoen, Eddy; Vandooren, Anne; Veloso, Anabela; Waldron, Niamh; Witters, Liesbeth; Thean, Aaron (2015) -
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
Heyns, Marc; Brammertz, Guy; Caymax, Matty; Groeseneken, Guido; Hoffmann, Thomas Y.; Lin, Dennis; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Pourtois, Geoffrey; Verhulst, Anne; Wang, Gang (2010) -
Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET
Arimura, Hiroaki; Eneman, Geert; Capogreco, Elena; Witters, Liesbeth; De Keersgieter, An; Favia, Paola; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Bender, Hugo; Ragnarsson, Lars-Ake; Mitard, Jerome; Collaert, Nadine; Mocuta, Dan; Horiguchi, Naoto (2018) -
An extended "Y function" method for saturation regime characterization: application to bulk Si and Ge technologies
Diouf, C.; Cros, A.; Monfray, S.; Mitard, Jerome; Rosa, J.; Gloria, D.; Ghibaudo, G. (2012) -
An in-depth study of high-performing strained germanium nanaowires pFETs
Mitard, Jerome; Jang, Doyoung; Eneman, Geert; Arimura, Hiroaki; Parvais, Bertrand; Richard, Olivier; Van Marcke, Patricia; Witters, Liesbeth; Capogreco, Elena; Bender, Hugo; Ritzenthaler, Romain; Mertens, Hans; Hikavyy, Andriy; Loo, Roger; Dekkers, Harold; Sebaai, Farid; Horiguchi, Naoto; Mocuta, Anda; Collaert, Nadine (2018) -
An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates
Waldron, Niamh; Merckling, Clement; Guo, Weiming; Ong, Patrick; Teugels, Lieve; Ansar, Sheikh; Tsvetanova, Diana; Sebaai, Farid; van Dorp, Dennis; Milenin, Alexey; Lin, Dennis; Nyns, Laura; Mitard, Jerome; Pourghaderi, Mohammad Ali; Douhard, Bastien; Richard, Olivier; Bender, Hugo; Boccardi, Guillaume; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014) -
An investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors
Hikavyy, Andriy; Witters, Liesbeth; Mitard, Jerome; Vanherle, Wendy; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Analog performance and its variability in sub-10 nm fin-width FinFETs: a detailed analysis
Bhoir, Mandar S.; Chiarella, Thomas; Ragnarsson, Lars-Ake; Mitard, Jerome; Terzieva, Valentina; Horiguchi, Naoto; Mohapatra, Nihar R. (2019) -
Analysis of border traps in high-k gate dielectrics on high-mobility channels
Simoen, Eddy; Lin, Dennis; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Mitard, Jerome; Claeys, Cor (2013) -
Analysis of diffusion mechanisms for SSD in confined volumes : An alternative solution for extension formation in N7 and N5 technologies
Eyben, Pierre; Pawlak, Bartek; De Keersgieter, An; Kikuchi, Yoshiaki; Mitard, Jerome; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda (2018) -
Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach
Noda, Taji; Witters, Liesbeth; Mitard, Jerome; Rosseel, Erik; Hellings, Geert; Vrancken, Christa; Bender, Hugo; Hoffmann, T.Y.; Horiguchi, Naoto; Vandervorst, Wilfried (2011) -
Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
Noda, Taiji; Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Vrancken, Christa; Eyben, Pierre; Thean, Aaron; Horiguchi, Naoto; Vandervorst, Wilfried (2012) -
Applications of dynamic surface annealing for high-performance Si and Ge based MOS devices
Rosseel, Erik; Everaert, Jean-Luc; Hikavyy, Andriy; Witters, Liesbeth; Mitard, Jerome; Vandervorst, Wilfried (2011) -
Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm
Choi, Seoyeon; Park, Dong Geun; Kim, Min Jung; Bang, Seain; Kim, Jungchun; Jin, Seunghee; Huh, Ki Seok; Kim, Donghyun; Mitard, Jerome; Han, Cheol E.; Lee, Jae Woo (2023) -
Automatic prediction of MOSFETs threshold voltage by machine learning algorithms
Choi, Seoyeon; Park, Dong Geun; Kim, Min Jung; Bang, Seain; Kim, Jungchun; Jin, Seunghee; Huh, Ki Seok; Kim, Donghyun; Kim, Sanghyeok; Yoon, Inkyu; Mitard, Jerome; Han, Cheol E.; Lee, Jae Woo (2023) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Sioncke, Sonja; Arimura, Hiroaki; Putcha, Vamsi; Alian, AliReza; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Witters, Liesbeth; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri (2016) -
Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: challenges and solutions
Groeseneken, Guido; Aoulaiche, Marc; Cho, Moon Ju; Franco, Jacopo; Kaczer, Ben; Kauerauf, Thomas; Mitard, Jerome; Ragnarsson, Lars-Ake; Roussel, Philippe; Toledano Luque, Maria (2013) -
Border traps in Ge/III-V channel devices: Analysis and reliability aspects
Simoen, Eddy; Lin, Dennis; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Mitard, Jerome; Claeys, Cor (2013)