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An investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors
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An investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hikavyy, Andriy
;
Witters, Liesbeth
;
Mitard, Jerome
;
Vanherle, Wendy
;
Vandervorst, Wilfried
;
Dekoster, Johan
;
Loo, Roger
;
Caymax, Matty
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1935
since deposited on 2021-10-20
Acq. date: 2025-12-16
Citations
Metrics
Views
1935
since deposited on 2021-10-20
Acq. date: 2025-12-16
Citations