Publication:

An investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors

Date

2012
Meeting abstract
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorVanherle, Wendy
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDekoster, Johan
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-20T11:38:28Z
dc.date.available2021-10-20T11:38:28Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20816
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06222512
dc.source.conferenceInternational Silicon-Germanium Technology and Device Meeting
dc.source.conferencedate4/06/2012
dc.source.conferencelocationBerkeley, CA USA
dc.title

An investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors

dc.typeMeeting abstract
dspace.entity.typePublication
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