Browsing by author "Mitard, Jerome"
Now showing items 41-60 of 325
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BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities
Groeseneken, Guido; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Kauerauf, Thomas; Alian, AliReza; Mitard, Jerome; Arimura, Hiroaki; Lin, Dennis; Waldron, Niamh; Sioncke, Sonja; Witters, Liesbeth; Mertens, Hans; Ragnarsson, Lars-Ake; Heyns, Marc; Collaert, Nadine; Thean, Aaron; Steegen, An (2014-12) -
BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs
Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; Cho, Moon Ju; Grasser, Tibor; Mitard, Jerome; Arimura, Hiroaki; Witters, Liesbeth; Cott, Daire; Waldron, Niamh; Zhou, Daisy; Vais, Abhitosh; Lin, Dennis; Alian, AliReza; Pourghaderi, Mohammad Ali; Martens, Koen; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Heyns, Marc; Groeseneken, Guido (2014) -
Buried power rail integration with FinFETs for ultimate CMOS scaling
Gupta, Anshul; Varela Pedreira, Olalla; Arutchelvan, Goutham; Zahedmanesh, Houman; Devriendt, Katia; Hanssen, Frederik; Tao, Zheng; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, Noemie; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min-Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Cousserier, Joris; Yakimets, Dmitry; Lazzarino, Frederic; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Jaysankar, Manoj; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Boemmels, Juergen; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto (2020) -
Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node
Gupta, Anshul; Mertens, Hans; Tao, Zheng; Demuynck, Steven; Boemmels, Juergen; Arutchelvan, Goutham; Devriendt, Katia; Varela Pedreira, Olalla; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Zahedmanesh, Houman; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, N.; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Yakimets, Dmitry; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Cousserier, Joris; Jaysankar, Manoj; Lazzarino, Frederic; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Tokei, Zsolt; Horiguchi, Naoto (2020) -
Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling
Crupi, Felice; Alioto, Massimo; Franco, Jacopo; Magnone, Paolo; Kaczer, Ben; Groeseneken, Guido; Mitard, Jerome; Witters, Liesbeth; Hoffmann, Thomas Y. (2012) -
Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors
Jiang, Rong; Zhang, En Xia; Liao, Wenjun; Liang, Chundong; Fleetwood, Daniel; Schrimpf, Ronald; Reed, Robert; Linten, Dimitri; Mitard, Jerome; Collaert, Nadine; Sioncke, Sonja; Waldron, Niamh (2018) -
Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
Belmonte, Attilio; Oh, Hyungrock; Rassoul, Nouredine; Donadio, Gabriele Luca; Mitard, Jerome; Dekkers, Harold; Delhougne, Romain; Subhechha, Subhali; Vaisman Chasin, Adrian; van Setten, Michiel; Kljucar, Luka; Mao, Ming; Puliyalil, Harinarayanan; Pak, Murat; Teugels, Lieve; Tsvetanova, Diana; Banerjee, Kaustuv; Souriau, Laurent; Tokei, Zsolt; Goux, Ludovic; Kar, Gouri Sankar (2020) -
CDM-time domain turn-on transient of ESD diodes in bulk FinFET and GAA NW technologies
Chen, Shih-Hung; Linten, Dimitri; Hellings, Geert; Simicic, Marko; Kaczer, Ben; Chiarella, Thomas; Mertens, Hans; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto (2019) -
Challenges and opportunities in advanced Ge pMOSFETs
Simoen, Eddy; Mitard, Jerome; Hellings, Geert; Eneman, Geert; De Jaeger, Brice; Witters, Liesbeth; Vincent, Benjamin; Loo, Roger; Delabie, Annelies; Sioncke, Sonja; Caymax, Matty; Claeys, Cor (2012) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme
Parihar, Narendra; Arutchelvan, Goutham; Franco, Jacopo; Baudot, Sylvain; Opdebeeck, Ann; Demuynck, Steven; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Mitard, Jerome; De Heyn, Vincent; Mercha, Abdelkarim (2021) -
Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Benbakhti, B.; Zhang, J.F.; Li, Z.; Zhang, W; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2012) -
Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Ma, J.; Zhang, J.F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei Dong; Zheng, Xue Feng; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014) -
Characterization of self-heating in high-mobility Ge FinFET pMOS devices
Bury, Erik; Kaczer, Ben; Mitard, Jerome; Collaert, Nadine; Khatami, N.S.; Aksamija, Zlatan; Vasileska, Dragica; Raleva, Katerina; Witters, Liesbeth; Hellings, Geert; Linten, Dimitri; Groeseneken, Guido; Thean, Aaron (2015) -
Characterization of voltage and frequency dependent parasitics observed in Si passivated germanium metal gate pMOSFETs
Krom, Raymond; Mitard, Jerome; Plourde, Chelsea; De Jaeger, Brice; Meuris, Marc; Heyns, Marc (2008) -
Charge collection mechanisms of Ge-channel bulk pMOSFETs
Samsel, Isaak; Zhang, E.X.; Sternberg, A.L.; Ni, K.; Reed, Robert; Fleedwood, Daniel; Alles, M.L.; Schrimpf, R.D.; Linten, Dimitri; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine (2015) -
Combined Machine Learning Techniques For Characteristics Classification and Threshold Voltage Extraction of Transistors
Kocak, Husnu Murat; Mitard, Jerome; Naskali, Ahmet Teoman (2022) -
Combining TCAD and advanced metrology techniques to support device integration towards N3
Eyben, Pierre; De Keersgieter, An; Celano, Umberto; Wouters, Lennaert; Chiarella, Thomas; Ritzenthaler, Romain; Mertens, Hans; Richard, Olivier; Paredis, Kristof; Matagne, Philippe; Mitard, Jerome; Horiguchi, Naoto; Goux, Ludovic (2021) -
Comparison of charge pumping and 1/f noise in irradiated Ge pMOSFETs
Francis, S.A.; Zhang, Cher Xuan; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Golloway, Kenneth F.; Simoen, Eddy; Mitard, Jerome; Claeys, Cor (2011) -
Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond
Ritzenthaler, Romain; Mertens, Hans; Eneman, Geert; Simoen, Eddy; Bury, Erik; Eyben, Pierre; Bufler, Fabian; Oniki, Yusuke; Briggs, Basoene; Chan, BT; Hikavyy, Andriy; Mannaert, Geert; Parvais, Bertrand; Vaisman Chasin, Adrian; Mitard, Jerome; Dentoni Litta, Eugenio; Samavedam, Sri; Horiguchi, Naoto (2021)