Automatic prediction of MOSFETs threshold voltage by machine learning algorithms

Abstract

Automatic V-th extraction with ML is proposed. Various Vth extraction methods have been suggested for different types of FETs. It takes lots of time and effort to find an appropriate extraction method for each device, and V-th can be differently estimated depending on the insight of researcher. These problems are solved through an objective evaluation method using ML. The final model is represented by kNN regression with normalized both V-G and I-D.