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Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
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1951 since deposited on 2021-10-20
3last month
Acq. date: 2026-05-18
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Statistics
Views
1951 since deposited on 2021-10-20
3last month
Acq. date: 2026-05-18
Citations