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Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
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1945 since deposited on 2021-10-20
1last month
Acq. date: 2026-03-17
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Views
1945 since deposited on 2021-10-20
1last month
Acq. date: 2026-03-17
Citations