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Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
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Authors
Noda, Taiji
;
Mitard, Jerome
;
Witters, Liesbeth
;
Hellings, Geert
;
Vrancken, Christa
;
Eyben, Pierre
;
Thean, Aaron
;
Horiguchi, Naoto
;
Vandervorst, Wilfried
Conference
International Electron Devices Meeting - IEDM
Title
Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
Publication type
Proceedings paper
Embargo date
9999-12-31
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