Browsing by author "Thrush, E. J."
Now showing items 21-37 of 37
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Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD
Harris, J. J.; Lee, K. J.; Harrison, I.; Flannery, L. B.; Korakakis, D.; Cheng, T. S.; Foxon, C. T.; Bougrioua, Zahia; Moerman, Ingrid; Van der Stricht, Wim; Thrush, E. J.; Hamilton, B.; Ferhah, K. (1999) -
Lateral epitaxial overgrowth for GaN-based LEDs
Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Thrush, E. J. (1999) -
Material optimisation for AlGaN/GaN HFET applications
Bougrioua, Zahia; Moerman, Ingrid; Sharma, N.; Wallis, R. H.; Cheyns, Jan; Jacobs, Koen; Thrush, E. J.; Considine, L.; Beanland, R.; Farvacque, J. L.; Humphreys, C. (2001) -
Microstructure and compositional bahviour of InGaN/GaN multiple quantum well structures
Duxbury, N.; Bangert, U.; Shang, P.; Thrush, E. J.; Jacobs, Koen (1999) -
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Demeester, Piet; Harris, J. J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Thrush, E. J. (1999) -
MOCVD-growth of gallium nitride
Thrush, E. J.; Crawley, J. A.; Van der Stricht, Wim; Moerman, Ingrid; May, L.; Nicholls, E.; Vergani, G. (1996) -
MOVPE growth and characterization of high quality InGaN films
Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Thrush, E. J.; Crawley, J. A. (1997) -
MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells
Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Thrush, E. J.; Crawley, J. A. (1997) -
OMVPE-based epitaxial lateral overgrowth for GaN LEDs
Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; De Naeyer, J.; Verstuyft, Steven; Van Daele, Peter; Tricker, D. M.; Amokrane, A.; Dassonneville, S.; Sieber, B.; Thrush, E. J. (1999) -
Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Stafford, A.; Irvine, S. J. C.; Bougrioua, Zahia; Jacobs, Koen; Moerman, Ingrid; Thrush, E. J.; Considine, L. (2000) -
Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry
Stafford, A.; Irvine, S. J. C.; Bougrioua, Zahia; Jacobs, Koen; Moerman, Ingrid; Thrush, E. J.; Considine, L.; Crawley., J. (2000) -
Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
Harris, J. J.; Lee, K. J.; Wang, T.; Sakai, S.; Bougrioua, Zahia; Moerman, Ingrid; Thrush, E. J.; Webb, J. B.; Tang, H.; Martin, Tom; Maude, D. K.; Portal, J. C. (2001) -
Study of GaN and InGaN films grown by metalorganic chemical vapour deposition
Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Crawley, J. A.; Thrush, E. J. (1997) -
Study of GaN films grown by metalorganic chemical vapour deposition
Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Crawley, J. A.; Thrush, E. J. (1996) -
The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition
Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Crawley, J. A.; Thrush, E. J.; Middleton, P. G.; Trager Cowan, C.; O'Donnell, K. P. (1996) -
Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Demeester, Piet; Harris, J. J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Thrush, E. J. (1999) -
Violet-blue InGaN/GaN MQW light emitting diodes on epitaxially laterally overgrown GaN
Jacobs, Koen; Van der Stricht, Wim; Moerman, Ingrid; Demeester, Piet; Verstuyft, Steven; De Naeyer, J.; Van Daele, Peter; Amokrane, A.; Dassonneville, S.; Sieber, B.; Thrush, E. J. (1999)