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Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD
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Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD
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Date
1999
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Harris, J. J.
;
Lee, K. J.
;
Harrison, I.
;
Flannery, L. B.
;
Korakakis, D.
;
Cheng, T. S.
;
Foxon, C. T.
;
Bougrioua, Zahia
;
Moerman, Ingrid
;
Van der Stricht, Wim
;
Thrush, E. J.
;
Hamilton, B.
;
Ferhah, K.
Journal
Physica Status Solidi A
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Views
2021
since deposited on 2021-10-06
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last month
1
last week
Acq. date: 2026-02-24
Citations