Publication:

Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD

Date

1999
Journal article
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dc.contributor.authorHarris, J. J.
dc.contributor.authorLee, K. J.
dc.contributor.authorHarrison, I.
dc.contributor.authorFlannery, L. B.
dc.contributor.authorKorakakis, D.
dc.contributor.authorCheng, T. S.
dc.contributor.authorFoxon, C. T.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorThrush, E. J.
dc.contributor.authorHamilton, B.
dc.contributor.authorFerhah, K.
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned2021-10-06T11:17:12Z
dc.date.available2021-10-06T11:17:12Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3491
dc.source.beginpage363
dc.source.endpage367
dc.source.issue1
dc.source.journalPhysica Status Solidi A
dc.source.volume176
dc.title

Interpretation of the temperature-dependent transport properties of GaN/Sapphire films grown by MBE and MOCVD

dc.typeJournal article
dspace.entity.typePublication
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