Browsing by author "Leys, Maarten"
Now showing items 21-40 of 122
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Controlled III/V nanowire growth by selective-area vapor-phase epitaxy
Cantoro, Mirco; Brammertz, Guy; Richard, Olivier; Bender, Hugo; Clemente, Francesca; Leys, Maarten; Degroote, Stefan; Caymax, Matty; Heyns, Marc; De Gendt, Stefan (2009) -
Controlled III/V nanowire growth by selective-area vapour phase epitaxy
Cantoro, Mirco; Brammertz, Guy; Richard, Olivier; Clemente, Francesca; Leys, Maarten; Degroote, Stefan; Caymax, Matty; Heyns, Marc; De Gendt, Stefan (2009) -
Controlled, selective III, V nanowire heteroepitaxy
Cantoro, Mirco; Brammertz, Guy; Leys, Maarten; Degroote, Stefan; Heyns, Marc; De Gendt, Stefan (2009) -
Correlation of transport and structural properties in AlGaN/GaN HEMT: Strain modification by means of AlN interlayers
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Ruythooren, Wouter; Schreurs, Dominique; Choi, Kang-Hoon; Borghs, Gustaaf; Van Daele, Benny; Van Tendeloo, Gustaaf; Farvacque, Jean-Louis; Carosella, Francesca (2003) -
Crack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Boeykens, Steven; Derluyn, Joff; Germain, Marianne; Engelen, Jan; Borghs, Gustaaf (2005) -
Crystalline Ge3N4 on Ge(111)
Lieten, Ruben; Degroote, Stefan; Leys, Maarten; Kuijk, Maarten; Borghs, Gustaaf (2008) -
Deep defects in GaN/AlGaN/SiC heterostructures
Kindl, D.; Hubik, P.; Kristofik, J.; Mares, J.J.; Vyborny, Z.; Leys, Maarten; Boeykens, Steven (2009) -
Development of metamorphic dual-junction solar cells
Mols, Yves; Leys, Maarten; van der Heide, Johan; Posthuma, Niels; Zhao, Larry; Flamand, Giovanni; Poortmans, Jef; Borghs, Gustaaf (2007) -
Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Jacobs, Koen; Leys, Maarten; Moerman, Ingrid (2002) -
Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Jacobs, K.; Van Daele, B.; Leys, Maarten; Moerman, Ingrid; Van Tendeloo, G. (2003) -
Electrically active defects at the AlN/Si(111) interface studied by DLTS and ESR
Simoen, Eddy; Visalli, Domenica; Van Hove, Marleen; Leys, Maarten; Favia, Paola; Bender, Hugo; Borghs, Gustaaf; Nguyen, A.P.D.; Stesmans, Andre (2012) -
Enhancement of GaN-based device robustness by means of in-situ SiN cap layer
Medjdoub, Farid; Marcon, Denis; Cheng, Kai; Van Hove, Marleen; Leys, Maarten; Decoutere, Stefaan (2010) -
Epitaxial growth of III-nitrides on silicon substrates
Degroote, Stefan; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Derluyn, Joff; Borghs, Gustaaf; Germain, Marianne (2010) -
Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Cheng, Kai; Motsnyi, Vasyl; Leys, Maarten; Degroote, Stefan; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2007) -
Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Cheng, Kai; Motsnyi, Vasyl; Leys, Maarten; Degroote, Stefan; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2008) -
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010) -
Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Jo; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2010) -
Ferromagnetic-metal-based InGaAs(P)/InP optical waveguide isolator: steps towards experimental validation
Vanwolleghem, Mathias; Leys, Maarten; Das, Johan; Lagae, Liesbet; De Boeck, Jo; Van Daele, Peter; Baets, Roel (2001) -
Formation of metallic In in InGaN/GaN multiquantum wells
Van Daele, B.; Van Tendeloo, G.; Jacobs, Koen; Moerman, Ingrid; Leys, Maarten (2004)