Browsing by author "Bakeroot, Benoit"
Now showing items 41-60 of 112
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Future trends in intelligent interface technologies for 42V battery automotive applications
Moens, P.; Bolognesi, D.; Delobel, L.; Villanueva, D.; Reynders, K.; Lowe, A.; Van Herzeele, G.; Tack, M.; Bakeroot, Benoit (2002) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
Stockman, Arno; Masin, Fabrizio; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Bakeroot, Benoit; Moens, Peter (2018) -
Gate module study for performance improvement in vertical GaN device
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Gate reliability of p-GaN HEMT with gate metal retraction
Tallarico, Andrea; Stoffels, Steve; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Sangiorgi, E; Fiegna, C (2019) -
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
Millesimo, M.; Bakeroot, Benoit; Borga, Matteo; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N. (2022) -
Gate stability of enhancement mode GaN power devices
Wu, Tian-Li; Marcon, Denis; De Jaeger, Brice; Posthuma, Niels; Bakeroot, Benoit; You, Shuzhen; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2016) -
High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
Tang, Shun-Wei; Huang, Zhen-Hong; Chen, Szu-Chia; Lin, Wei-Syuan; de Jaeger, Brice; Wellekens, Dirk; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan; Wu, Tian-Li (2022) -
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
Millesimo, M.; Fiegna, C.; Tallarico, A. N.; Posthuma, Niels; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2021) -
Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells
Minj, Albert; Zhao, Ming; Bakeroot, Benoit; Paredis, Kristof (2021) -
Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
Hu, Jie; Stoffels, Steve; Lenci, Silvia; Ronchi, Nicolo; De Jaeger, Brice; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Favero, D.; De Santi, C.; Mukherjee, K.; Borga, Matteo; Geens, Karen; Chatterjee, Urmimala; Bakeroot, Benoit; Decoutere, Stefaan; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs
Millesimo, M.; Tallarico, A. N.; Posthuma, Niels; Bakeroot, Benoit; Borga, Matteo; Decoutere, Stefaan (2021) -
Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate
Tallarico, Andrea; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Fiegna, C; Sangiorgi, E (2021) -
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
Favero, D.; De Santi, C.; Mukherjee, K.; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022) -
Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
Acurio Mendez, Eliana; Crupi, Felice; De Jaeger, Brice; Ronchi, Nicolo; Bakeroot, Benoit; Decoutere, Stefaan; Trojman, Lionel (2019) -
Integrated driver with optical compensation for improved uniformity of emissive displays
Maeyaert, Stefaan; Bakeroot, Benoit; Doutreloigne, Jan; Monte, Ann; Bauwens, P.; Van Calster, Andre (2008-10) -
Integration of 650 V GaN power ICs on 200 mm engineered substrates
Li, Xiangdong; Geens, Karen; Wellekens, Dirk; Zhao, Ming; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Fahle, Dirk; Hahn, Herwig; Heuken, Michael; Odnoblyudov, Vlad; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2020) -
Integration of GaN power ICs on 200 mm engineered substrates
Li, Xiangdong; Geens, Karen; Wellekens, Dirk; Zhao, Ming; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Fahle, Dirk; Hahn, Herwig; Odnoblyudov, Vlad; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2020)