A 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistors

dc.contributor.author	Kuhn, Rudiger
dc.contributor.author	Decoutere, Stefaan
dc.contributor.author	Caymax, Matty
dc.contributor.author	Vleugels, Frank
dc.contributor.author	Verschooten, Eric
dc.contributor.author	Loo, Roger
dc.contributor.author	Loheac, J. L.
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.imecauthor	Caymax, Matty
dc.contributor.imecauthor	Vleugels, Frank
dc.contributor.imecauthor	Loo, Roger
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.date.accessioned	2021-10-06T11:35:28Z
dc.date.available	2021-10-06T11:35:28Z
dc.date.issued	1999
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/3581
dc.source.beginpage	436
dc.source.conference	ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium.
dc.source.endpage	439
dc.title	A 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistors
dc.type	Proceedings paper
dspace.entity.type	Publication
Files
Publication available in collections:	Conference contributions

Date