Publication:

Use of a purged FOUP to improve H-terminated silicon surface stability prior to epitaxial growth

Date

2014
Proceedings Paper
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dc.contributor.authorWostyn, Kurt
dc.contributor.authorRondas, Dirk
dc.contributor.authorKenis, Karine
dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMertens, Paul
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorD'Urzo, Lucia
dc.contributor.authorVan Autryve, Luc
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorRondas, Dirk
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorD'Urzo, Lucia
dc.contributor.imecauthorVan Autryve, Luc
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-22T08:27:03Z
dc.date.available2021-10-22T08:27:03Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24835
dc.identifier.urlhttp://ecst.ecsdl.org/content/64/6/669.abstract
dc.source.beginpage669
dc.source.conferenceSiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.source.endpage673
dc.title

Use of a purged FOUP to improve H-terminated silicon surface stability prior to epitaxial growth

dc.typeProceedings paper
dspace.entity.typePublication
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