Publication:
Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications
Loading...
Journal
Abstract
Description
Metrics
Views
837 since deposited on 2023-10-15
423item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
837 since deposited on 2023-10-15
423item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations