Publication:

Laser annealed in-situ P-doped Ge for on-chip laser source apllications

Date

2016
Proceedings Paper
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cris.virtual.orcid0000-0003-0778-2669
cris.virtual.orcid0000-0002-1944-9970
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dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorShimura, Yosuke
dc.contributor.authorPorret, Clément
dc.contributor.authorVan Deun, Rik
dc.contributor.authorLoo, Roger
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorVan Campenhout, Joris
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.date.accessioned2021-10-23T15:10:35Z
dc.date.available2021-10-23T15:10:35Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27344
dc.identifier.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2541474
dc.source.beginpage98911U
dc.source.conferenceSilicon Photonics and Photonics Integrated Circuits V
dc.source.conferencedate13/05/2016
dc.source.conferencelocationBrussels Belgium
dc.title

Laser annealed in-situ P-doped Ge for on-chip laser source apllications

dc.typeProceedings paper
dspace.entity.typePublication
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