Equivalent oxide thickness reduction for high-k gate stacks by optimized rare-earth silicate reactions

dc.contributor.author	Van Elshocht, Sven
dc.contributor.author	Adelmann, Christoph
dc.contributor.author	Lehnen, Peer
dc.contributor.author	De Gendt, Stefan
dc.contributor.imecauthor	Van Elshocht, Sven
dc.contributor.imecauthor	Adelmann, Christoph
dc.contributor.imecauthor	De Gendt, Stefan
dc.contributor.orcidimec	Van Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimec	Adelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimec	De Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned	2021-10-18T04:07:24Z
dc.date.available	2021-10-18T04:07:24Z
dc.date.issued	2009
dc.identifier.issn	1099-0062
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/16381
dc.identifier.url	http://www.ecsdl.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF6000012000005000G17000001&idtype=cvips&gifs=Yes
dc.source.beginpage	G17
dc.source.endpage	G19
dc.source.issue	5
dc.source.journal	Electrochemical and Solid-State Letters
dc.source.volume	12
dc.title	Equivalent oxide thickness reduction for high-k gate stacks by optimized rare-earth silicate reactions
dc.type	Journal article
dspace.entity.type	Publication
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