Publication:

Depth resolution and surface transients in crystalline Silicon at ultra low energies

Date

2009-09
Meeting abstract
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dc.contributor.authorGoossens, Jozefien
dc.contributor.authorBerghmans, Bart
dc.contributor.authorFranquet, Alexis
dc.contributor.authorNguyen, Duy
dc.contributor.authorDelmotte, Joris
dc.contributor.authorGeenen, Luc
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-17T22:27:59Z
dc.date.available2021-10-17T22:27:59Z
dc.date.issued2009-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15372
dc.source.beginpage247
dc.source.conference17th International Conference on Secondary Ion Mass Spectrometry - SIMS XVII
dc.source.conferencedate14/08/2009
dc.source.conferencelocationToronto Canada
dc.title

Depth resolution and surface transients in crystalline Silicon at ultra low energies

dc.typeMeeting abstract
dspace.entity.typePublication
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