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Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device

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dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorChen, Michael
dc.contributor.authorShi, FangFang
dc.contributor.authorDegraeve, Robin
dc.contributor.authorChen, Yangyin
dc.contributor.authorWitters, Thomas
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-22T01:41:48Z
dc.date.available2021-10-22T01:41:48Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23871
dc.source.beginpage162
dc.source.conferenceSymposium on VLSI technology
dc.source.conferencedate9/06/2014
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage163
dc.title

Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device

dc.typeProceedings paper
dspace.entity.typePublication
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