Publication:

Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory

Date

2019
Proceedings Paper
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dc.contributor.authorVerreck, Devin
dc.contributor.authorArreghini, Antonio
dc.contributor.authorBastos, Joao
dc.contributor.authorSchanovsky, Franz
dc.contributor.authorMitterbauer, Ferdinand
dc.contributor.authorKernstock, C.
dc.contributor.authorKarner, Markus
dc.contributor.authorDegraeve, Robin
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorFurnemont, Arnaud
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.date.accessioned2021-10-27T22:41:20Z
dc.date.available2021-10-27T22:41:20Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34376
dc.source.beginpage755
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2019
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage758
dc.title

Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory

dc.typeProceedings paper
dspace.entity.typePublication
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