Publication:
Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory
Date
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0002-7493-9681 | |
| cris.virtual.orcid | 0000-0001-9971-6954 | |
| cris.virtual.orcid | 0000-0002-8877-9850 | |
| cris.virtual.orcid | 0000-0002-4609-5573 | |
| cris.virtual.orcid | 0000-0002-3833-5880 | |
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| cris.virtualsource.department | ce03ac04-c546-4df1-a775-1c68e533233e | |
| cris.virtualsource.department | 62920b7f-7796-4f0c-9330-257cf5e12846 | |
| cris.virtualsource.department | 8b84673b-878f-4c3b-959d-b7cdae2d70d9 | |
| cris.virtualsource.department | 6b87853a-fb57-4bc6-ae03-fa067cb9a855 | |
| cris.virtualsource.orcid | d910b17c-774d-4036-8b49-51680f68b5e2 | |
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| cris.virtualsource.orcid | 6b87853a-fb57-4bc6-ae03-fa067cb9a855 | |
| dc.contributor.author | Verreck, Devin | |
| dc.contributor.author | Arreghini, Antonio | |
| dc.contributor.author | Bastos, Joao | |
| dc.contributor.author | Schanovsky, Franz | |
| dc.contributor.author | Mitterbauer, Ferdinand | |
| dc.contributor.author | Kernstock, C. | |
| dc.contributor.author | Karner, Markus | |
| dc.contributor.author | Degraeve, Robin | |
| dc.contributor.author | Van den Bosch, Geert | |
| dc.contributor.author | Furnemont, Arnaud | |
| dc.contributor.imecauthor | Verreck, Devin | |
| dc.contributor.imecauthor | Arreghini, Antonio | |
| dc.contributor.imecauthor | Bastos, Joao | |
| dc.contributor.imecauthor | Degraeve, Robin | |
| dc.contributor.imecauthor | Van den Bosch, Geert | |
| dc.contributor.imecauthor | Furnemont, Arnaud | |
| dc.contributor.orcidimec | Verreck, Devin::0000-0002-3833-5880 | |
| dc.contributor.orcidimec | Arreghini, Antonio::0000-0002-7493-9681 | |
| dc.contributor.orcidimec | Bastos, Joao::0000-0002-8877-9850 | |
| dc.contributor.orcidimec | Van den Bosch, Geert::0000-0001-9971-6954 | |
| dc.contributor.orcidimec | Furnemont, Arnaud::0000-0002-6378-1030 | |
| dc.date.accessioned | 2021-10-27T22:41:20Z | |
| dc.date.available | 2021-10-27T22:41:20Z | |
| dc.date.embargo | 9999-12-31 | |
| dc.date.issued | 2019 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/34376 | |
| dc.source.beginpage | 755 | |
| dc.source.conference | IEEE International Electron Devices Meeting - IEDM | |
| dc.source.conferencedate | 7/12/2019 | |
| dc.source.conferencelocation | San Francisco, CA USA | |
| dc.source.endpage | 758 | |
| dc.title | Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | Original bundle
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