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Monolithically Integrated Bootstrapped Gate Driver With a 200-V GaN Power Switch

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dc.contributor.authorSamperi, Katia
dc.contributor.authorChatterjee, Urmimala
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorPennisi, Salvatore
dc.contributor.imecauthorChatterjee, Urmimala
dc.contributor.orcidimecChatterjee, Urmimala::0000-0002-8934-6774
dc.date.accessioned2025-05-01T06:24:41Z
dc.date.available2025-05-01T06:24:41Z
dc.date.issued2025-MAR 6
dc.description.wosFundingTextThis work was supported in part by European Commission through Project ASCENT+: Access to European Infrastructure for Nanoelectronicsfunded under H2020 under Grant 871130 by Italian Ministry of Research PONRicerca e innovazione 2014-2020, Azione n. IV.6.
dc.identifier.doi10.1109/TCSI.2025.3542714
dc.identifier.issn1549-8328
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45573
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
dc.source.numberofpages10
dc.subject.keywordsHALF-BRIDGE
dc.subject.keywordsTECHNOLOGY
dc.title

Monolithically Integrated Bootstrapped Gate Driver With a 200-V GaN Power Switch

dc.typeJournal article
dspace.entity.typePublication
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