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Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques
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Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques
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Date
2007
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lukyanchikova, N.
;
Garbar, N.
;
Kudina, V.
;
Smolanka, A.
;
Simoen, Eddy
;
Claeys, Cor
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1947
since deposited on 2021-10-16
Acq. date: 2025-12-11
Citations
Metrics
Views
1947
since deposited on 2021-10-16
Acq. date: 2025-12-11
Citations