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Design, fabrication and characterization of advanced field effect transistors with high-mobility channels and heterostructure confinement

Date

2012-03
Dissertation
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-5376-2119
cris.virtualsource.departmentcd811942-aea0-4312-8eb5-d9cc179a6b3d
cris.virtualsource.orcidcd811942-aea0-4312-8eb5-d9cc179a6b3d
dc.contributor.advisorVan Houtte, P.
dc.contributor.authorHellings, Geert
dc.contributor.imecauthorHellings, Geert
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.thesisadvisorDe Meyer, Kristin
dc.date.accessioned2021-10-20T11:32:21Z
dc.date.available2021-10-20T11:32:21Z
dc.date.issued2012-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20795
dc.title

Design, fabrication and characterization of advanced field effect transistors with high-mobility channels and heterostructure confinement

dc.typePHD thesis
dspace.entity.typePublication
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