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Interface charge trapping induced flatBand voltage shift during plasma-enhanced atomic layer deposition in through silicon via

Date

2017
Journal article
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dc.contributor.authorLi, Yunlong
dc.contributor.authorSuhard, Samuel
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorVan Besien, Els
dc.contributor.authorStucchi, Michele
dc.contributor.authorCroes, Kristof
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.contributor.imecauthorLi, Yunlong
dc.contributor.imecauthorSuhard, Samuel
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVan Besien, Els
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorCroes, Kristof
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecLi, Yunlong::0000-0003-4791-4013
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecVan Besien, Els::0000-0002-5174-2229
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.accessioned2021-10-24T07:53:44Z
dc.date.available2021-10-24T07:53:44Z
dc.date.issued2017
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28812
dc.identifier.urlhttp://aip.scitation.org/doi/10.1063/1.5001026
dc.source.beginpage245302
dc.source.issue24
dc.source.journalJournal of Applied Physics
dc.source.volume122
dc.title

Interface charge trapping induced flatBand voltage shift during plasma-enhanced atomic layer deposition in through silicon via

dc.typeJournal article
dspace.entity.typePublication
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