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Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes

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dc.contributor.authorVandamme, Lorenz
dc.contributor.authorVandamme, Ewout
dc.contributor.authorDobbelsteen, J. J.
dc.date.accessioned2021-09-30T09:56:31Z
dc.date.available2021-09-30T09:56:31Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2262
dc.source.beginpage901
dc.source.endpage908
dc.source.issue6
dc.source.journalSolid-State Electronics
dc.source.volume41
dc.title

Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes

dc.typeJournal article
dspace.entity.typePublication
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