Publication:

Regular and inverted operating regimes in TiN/a-Si/TiOx/TiN RRAM devices

Date

2018
Journal article
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dc.contributor.authorSubhechha, Subhali
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGoux, Ludovic
dc.contributor.authorClima, Sergiu
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-26T04:56:39Z
dc.date.available2021-10-26T04:56:39Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31879
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8274938/
dc.source.beginpage351
dc.source.endpage354
dc.source.issue3
dc.source.journalIEEE Electron Device Letters
dc.source.volume39
dc.title

Regular and inverted operating regimes in TiN/a-Si/TiOx/TiN RRAM devices

dc.typeJournal article
dspace.entity.typePublication
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