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Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content

Date

2013
Journal article
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dc.contributor.authorNakashima, Toshiyuki
dc.contributor.authorYoneoka, Masashi
dc.contributor.authorTsunoda, Isao
dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorGonzalez, Mireia B
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorYoshino, Kenji
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-21T10:21:57Z
dc.date.available2021-10-21T10:21:57Z
dc.date.issued2013
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22849
dc.identifier.urlhttp://jjap.jsap.jp/link?JJAP/52/094201/
dc.source.beginpage94201
dc.source.issue9
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume52
dc.title

Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content

dc.typeJournal article
dspace.entity.typePublication
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