Publication:

High doping/high electric field effects on the characteristics of CMOS compatible p-n junctions

Date

2010
Proceedings Paper
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-5218-4046
cris.virtual.orcid0000-0002-5849-3384
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.departmentdb73cf2d-2000-429c-bc92-553a1ef3e876
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orciddb73cf2d-2000-429c-bc92-553a1ef3e876
dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorKobayashi, Daisuke
dc.contributor.authorLuque Rodriguez, Abraham
dc.contributor.authorJimenez Tejada, Juan-Antonio
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.accessioned2021-10-18T21:35:15Z
dc.date.available2021-10-18T21:35:15Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17987
dc.source.beginpage307
dc.source.conferenceMicroelectronics Technology and Devices - SBMICRO 2010
dc.source.conferencedate6/09/2010
dc.source.conferencelocationSao Paulo Brazil
dc.source.endpage318
dc.title

High doping/high electric field effects on the characteristics of CMOS compatible p-n junctions

dc.typeProceedings paper
dspace.entity.typePublication
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